BLF8G24LS-200PN：LDMOS功率晶体管
200 W LDMOS功率晶体管，适用于2300 MHz至2400 MHz频率范围的基站应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2300 | 2400 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 200 | W | |||
| Gp | power gain | PL(AV) = 60 W; VDS = 28 V | 15.8 | 17.2 | dB | |
| RLin | input return loss | PL(AV) = 60 W; VDS = 28 V; IDq = 1740 mA | -11 | -8 | dB | |
| ηD | drain efficiency | PL(AV) = 60 W; VDS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; IDq = 1740 mA | 27 | 32 | % | |
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 60 W; VDS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; IDq = 1740 mA | -37 | -34 | dBc |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF8G24LS-200PN |  (SOT539B) | sot539b_po | Reel 13" Q1/T1 | 量产 | Standard Marking | BLF8G24LS-200PNJ( 9340 682 19118 ) | |
| Bulk Pack | 量产 | Standard Marking | BLF8G24LS-200PNU( 9340 682 19112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D1 | drain1 |  |  |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF8G24LS-200PN | BLF8G24LS-200PNJ |   | Always Pb-free | NA | |
| BLF8G24LS-200PN | BLF8G24LS-200PNU | | Always Pb-free | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF8G24LS-200PN (中文) | Power LDMOS transistor | Data sheet | 2014-01-20 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| 75017347 | Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| PCB_Design_BLF8G24LS-200PN_Data-sheet | PCB Design BLF8G24LS-200PN (Data sheet) | Design support | zip | 2014-01-23 |
| 75017604 | Gen8: the latest LDMOS RF power portfolio for wireless infrastructures | Leaflet | 2014-09-04 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| sot539b_po | earless flanged balanced ceramic package; 4 leads | Outline drawing | 2012-05-08 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF8G24LS-200PN | 9340 682 19118 | BLF8G24LS-200PNJ |
| BLF8G24LS-200PN | 9340 682 19112 | BLF8G24LS-200PNU |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF8G24LS-200PN (Data sheet) | Design support | 2014-01-23 |
- Power LDMOS transistor BLF8G24LS-200PN
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
- PCB Design BLF8G24LS-200PN (Data sheet) BLF8G24LS-200PN
