BLF7G27L(S)-75P:功率LDMOS晶体管

75 W LDMOS功率晶体管,适用于2300 MHz至2700 MHz频率范围的基站应用。

特性和优势
    • 主要用于降低记忆效应以提供极佳预失真能力
    • 内部匹配以方便使用
    • 极佳的强度
    • 集成ESD保护
    • 高效率
    • 主要用于宽带操作(2300 MHz至2700 MHz)
    • 低Rth提供极佳的热稳定性
    • 更低的输出电容提升了Doherty应用的性能
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • W-CDMA基站和多载波应用RF功率放大器
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF7G27L-75PSOT1121A2300270075282617NCDMA/IS95; NCDMA/IS95Production
BLF7G27LS-75PSOT1121B2300270075282617NCDMA/IS95; NCDMA/IS95Production
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF7G27L-75P
CDFM4
(SOT1121A)
sot1121a_poReel 13" Q1/T1量产Standard MarkingBLF7G27L-75P,118( 9340 645 56118 )
BLF7G27LS-75P
CDFM4
(SOT1121B)
sot1121b_poReel 13" Q1/T1量产Standard MarkingBLF7G27LS-75P,118( 9340 645 58118 )
Bulk Pack量产Standard MarkingBLF7G27LS-75P,112( 9340 645 58112 )
BLF7G27L-75P
CDFM4
(SOT1121A)
sot1121a_poBulk Pack停产Standard MarkingBLF7G27L-75P,112( 9340 645 56112 )
停产信息
型号订购码 (12NC)最后一次购买日期最后一次交货日期替代产品
BLF7G27L-75P93406455611230-sep-1531-dec-15BLF7G27L-75P
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF7G27L-75PBLF7G27L-75P,118Always Pb-freeNANA
BLF7G27LS-75PBLF7G27LS-75P,118Always Pb-freeNANA
BLF7G27LS-75PBLF7G27LS-75P,112Always Pb-freeNANA
BLF7G27L-75PBLF7G27L-75P,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF7G27L-75P_BLF7G27LS-75P (中文)Power LDMOS transistorData sheetpdf2010-07-15
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF7G27L-75P_ADS-2009_ModelBLF7G27L-75P ADS-2009 ModelSimulation modelzip2013-02-28
BLF7G27L-75P_ADS-2011_ModelBLF7G27L-75P ADS-2011 ModelSimulation modelzip2014-04-11
sot1121b_poearless flanged ceramic package; 4 leadsOutline drawingpdf2012-06-08
sot1121a_poflanged LDMOST ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
订购信息
型号订购码 (12NC)可订购的器件编号
BLF7G27L-75P9340 645 56118BLF7G27L-75P,118
BLF7G27LS-75P9340 645 58118BLF7G27LS-75P,118
BLF7G27LS-75P9340 645 58112BLF7G27LS-75P,112
模型
标题类型日期
BLF7G27L-75P ADS-2009 ModelSimulation model2013-02-28
BLF7G27L-75P ADS-2011 ModelSimulation model2014-04-11
Power LDMOS transistor BLF7G27L_S_75P
Power LDMOS transistor BLF7G27L_S_75P
Power LDMOS transistor BLF7G27L_S_75P
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 4 leads BLF9G38LS-90P
flanged LDMOST ceramic package; 2 mounting holes; 4 leads BLF884P_S
BLF7G27L-75P ADS-2009 Model BLF7G27L_S_75P
BLF7G27L-75P ADS-2011 Model BLF7G27L_S_75P