BLF6G10L(S)-260PRN：功率LDMOS晶体管

260 W LDMOS功率晶体管，适用于700 MHz至1000 MHz频率范围的基站应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作（700 MHz至1000 MHz）
    • 内部匹配以方便使用
    • 符合有害物质限制(RoHS) Directive 2002/95/EC
应用
    • GSM、GSM EDGE、W-CDMA和CDMA基站RF功率放大器
    • 700 MHz 至1000 MHz频率范围内的多载波应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF6G10L-260PRNSOT539A70010002602826.5222-c WCDMA; 2-c WCDMAProduction
BLF6G10LS-260PRNSOT539B70010002602826.5222-c WCDMA; 2-c WCDMAProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF6G10L-260PRN

(SOT539A)		sot539a_poReel 13" Q1/T1量产Standard MarkingBLF6G10L-260PRN:11( 9340 644 49118 )
Bulk Pack量产Standard MarkingBLF6G10L-260PRN,11( 9340 644 49112 )
BLF6G10LS-260PRN

(SOT539B)		sot539b_poReel 13" Q1/T1量产Standard MarkingBLF6G10LS-260PRN,1( 9340 644 51118 )
Bulk Pack量产Standard MarkingBLF6G10LS-260PRN:1( 9340 644 51112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF6G10L-260PRNBLF6G10L-260PRN:11Always Pb-freeNANA
BLF6G10L-260PRNBLF6G10L-260PRN,11Always Pb-freeNANA
BLF6G10LS-260PRNBLF6G10LS-260PRN,1Always Pb-freeNANA
BLF6G10LS-260PRNBLF6G10LS-260PRN:1Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF6G10L-260PRN_LS-260PRN (中文)Power LDMOS transistorData sheetpdf2013-07-12
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF6G10-260PRN_ADS-2009_ModelBLF6G10-260PRN ADS-2009 ModelSimulation modelzip2013-02-28
BLF6G10LS-260PRN_ADS-2012_ModelBLF6G10LS-260PRN ADS-2012 ModelSimulation modelzip2014-05-02
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_135CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF6G10L-260PRN9340 644 49118BLF6G10L-260PRN:11
BLF6G10L-260PRN9340 644 49112BLF6G10L-260PRN,11
BLF6G10LS-260PRN9340 644 51118BLF6G10LS-260PRN,1
BLF6G10LS-260PRN9340 644 51112BLF6G10LS-260PRN:1
模型
标题类型日期
BLF6G10-260PRN ADS-2009 ModelSimulation model2013-02-28
BLF6G10LS-260PRN ADS-2012 ModelSimulation model2014-05-02
Power LDMOS transistor BLF6G10L_S_260PRN
Power LDMOS transistor BLF6G10L_S_260PRN
Power LDMOS transistor BLF6G10L_S_260PRN
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
BLF6G10-260PRN ADS-2009 Model BLF6G10L_S_260PRN
BLF6G10LS-260PRN ADS-2012 Model BLF6G10L_S_260PRN
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