BLC8G27LS-240AV:功率LDMOS晶体管

240 W LDMOS封装非对称Doherty功率晶体管,适合2500 MHz至2700 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth,提供极佳的热稳定性
    • 设计用于宽带操作(2500 MHz至2700 MHz)
    • 非对称设计,可实现整个频段的最佳效率
    • 更低的输出电容,可增强Doherty应用中的性能
    • 针对低内存占用量设计,提供出色的数字预失真性能
    • 内部匹配,便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适合2500 MHz至2700 MHz频率范围内基站和多载波应用的RF功率放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range25002700MHz
PL(1dB)nominal output power at 1 dB gain compression240W
Gppower gainPL(AV) = 56 W; VDS = 28 V14dB
RLininput return lossPL(AV) = 56 W; VDS = 28 V; IDq = 500 mA-10dB
ηDdrain efficiencyPL(AV) = 56 W; VDS = 28 V; 2500 MHz < f < 2690 MHz; IDq = 500 mA37%
ACPRadjacent channel power ratioPL(AV) = 56 W; VDS = 28 V; 2500 MHz < f < 2690 MHz; IDq = 500 mA-25dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLC8G27LS-240AV
DFM8
(SOT1252-1)
sot1252-1_poReel 13" Q1/T1量产Standard MarkingBLC8G27LS-240AVJ( 9340 680 62118 )
Bulk Pack量产Standard MarkingBLC8G27LS-240AVU( 9340 680 62112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D2Pdrain2 (peak)
2D1Mdrain1 (main)
3G1Mgate1 (main)
4G2Pgate2 (peak)
5Ssource
6VDMvideo decoupling (main)
7n.c.not connected
8n.c.not connected
9VDPvideo decoupling (peak)
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLC8G27LS-240AVBLC8G27LS-240AVJAlways Pb-free33
BLC8G27LS-240AVBLC8G27LS-240AVUAlways Pb-free33
文档资料
档案名称标题类型格式日期
BLC8G27LS-240AV (中文)Power LDMOS transistorData sheetpdf2015-07-29
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLC8G27LS-240AV_Data-sheetPCB Design BLC8G27LS-240AV (Data sheet)Design supportzip2015-05-18
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLC8G27LS-240AV_ADS-2009_ModelBLC8G27LS-240AV ADS-2009 ModelSimulation modelzip2013-11-22
sot1252-1_poplastic earless flanged cavity package; 8 leadsOutline drawingpdf2013-05-28
订购信息
型号订购码 (12NC)可订购的器件编号
BLC8G27LS-240AV9340 680 62118BLC8G27LS-240AVJ
BLC8G27LS-240AV9340 680 62112BLC8G27LS-240AVU
模型
标题类型日期
BLC8G27LS-240AV ADS-2009 ModelSimulation model2013-11-22
其它
标题类型日期
PCB Design BLC8G27LS-240AV (Data sheet)Design support2015-05-18
Power LDMOS transistor BLC8G27LS-240AV
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
plastic earless flanged cavity package; 8 leads BLC8G27LS-240AV
BLC8G27LS-240AV ADS-2009 Model BLC8G27LS-240AV
PCB Design BLC8G27LS-240AV (Data sheet) BLC8G27LS-240AV