BLF8G19LS-170BV：功率LDMOS晶体管

170 W LDMOS功率晶体管，具有改进的视频带宽，适合1800 MHz至1990 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth，提供极佳的热稳定性
    • 去耦引线，可改进视频带宽（典型值：100 MHz）
    • 更低的输出电容，可增强Doherty应用中的性能
    • 针对低内存占用量设计，提供出色的预失真性能
    • 内部匹配，便于使用
    • 集成式ESD保护
    • 集成式电流感测
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 1800 MHz至1990 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range18001990MHz
PL(1dB)nominal output power at 1 dB gain compression170W
Gppower gainPL(AV) = 60 W; VDS = 32 V [0]17.31820.2dB
RLininput return lossPL(AV) = 60 W; VDS = 32 V; IDq = 1300 mA [0]-13-7dB
ηDdrain efficiencyPL(AV) = 60 W; VDS = 32 V; 1930 Hz ≤ f ≤ 1960 Hz; IDq = 1300 mA [0]2832%
ACPR5Madjacent channel power ratio (5 MHz)PL(AV) = 60 W; VDS = 32 V; 1930 Hz ≤ f ≤ 1960 Hz; IDq = 1300 mA-31-28dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G19LS-170BV
CDFM6
(SOT1120B)		sot1120b_poBulk Pack量产Standard MarkingBLF8G19LS-170BVU( 9340 671 69112 )
Reel 13" Q1/T1量产Standard MarkingBLF8G19LS-170BV,11( 9340 671 69118 )
Reel 7" Q1/T1量产Standard MarkingBLF8G19LS-170BVX( 9340 671 69115 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
4v.dvideo decoupling
5v.dvideo decoupling
6s.gsense gate
7s.dsense drain
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G19LS-170BVBLF8G19LS-170BVUAlways Pb-freeNANA
BLF8G19LS-170BVBLF8G19LS-170BV,11Always Pb-freeNANA
BLF8G19LS-170BVBLF8G19LS-170BVXAlways Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF8G19LS-170BV (中文)Power LDMOS transistorData sheetpdf2015-05-01
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G19LS-170BV_Data-sheetPCB Design BLF8G19LS-170BV (Data sheet)Design supportzip2013-03-26
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
75017398Extended video bandwidth with Doherty efficiencyLeafletpdf2013-03-21
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G19LS-170BV_ADS-2009_ModelBLF8G19LS-170BV ADS-2009 ModelSimulation modelzip2013-08-01
BLF8G19LS-170BV_ADS-2011_ModelBLF8G19LS-170BV ADS-2011 ModelSimulation modelzip2014-04-29
sot1120b_poearless flanged LDMOST ceramic package; 6 leadsOutline drawingpdf2012-06-15
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G19LS-170BV9340 671 69112BLF8G19LS-170BVU
BLF8G19LS-170BV9340 671 69118BLF8G19LS-170BV,11
BLF8G19LS-170BV9340 671 69115BLF8G19LS-170BVX
模型
标题类型日期
BLF8G19LS-170BV ADS-2009 ModelSimulation model2013-08-01
BLF8G19LS-170BV ADS-2011 ModelSimulation model2014-04-29
其它
标题类型日期
PCB Design BLF8G19LS-170BV (Data sheet)Design support2013-03-26
Power LDMOS transistor BLF8G19LS-170BV
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Extended video bandwidth with Doherty efficiency base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged LDMOST ceramic package; 6 leads BLF9G20LS-160V
BLF8G19LS-170BV ADS-2009 Model BLF8G19LS-170BV
BLF8G19LS-170BV ADS-2011 Model BLF8G19LS-170BV
PCB Design BLF8G19LS-170BV (Data sheet) BLF8G19LS-170BV
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