BLC8G27LS-100AV:LDMOS功率晶体管

100 W LDMOS封装非对称Doherty功率晶体管,适合于频率范围为2496 MHz至2690 MHz的基站应用。

特性和优势
    • 出色的耐用性
    • 高效
    • 低热阻,提供极佳的热稳定性
    • 采用去耦引脚,提高视频带宽性能
    • 更低的输出电容提升了Doherty应用的性能
    • 专为低内存占用量设计,提供极佳的预失真性能
    • 内部匹配,便于使用
    • 集成ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • RF功率放大器,适合于2496 MHz至2690 MHz频率范围内的LTE基站和多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range24962690MHz
PL(1dB)nominal output power at 1 dB gain compression100W
Gppower gainPL(AV) = 17.8 W; VDS = 28 V14.315.5dB
RLininput return lossPL(AV) = 17.8 W; VDS = 28 V; IDq = 250 mA-10-6dB
ηDdrain efficiencyPL(AV) = 17.8 W; VDS = 28 V; 2496 MHz < f < 2690 MHz; IDq = 250 mA3944%
ACPRadjacent channel power ratioPL(AV) = 17.8 W; VDS = 28 V; 2496 MHz < f < 2690 MHz; IDq = 250 mA-31-25dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLC8G27LS-100AV
DFM6
(SOT1275-1)
sot1275-1_poTray, NonBakeable, Multiple in Drypack量产Standard MarkingBLC8G27LS-100AVZ( 9340 684 51517 )
Reel 13" Q1/T1 in Drypack量产Standard MarkingBLC8G27LS-100AVY( 9340 684 51518 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D1drain1 (main)
2D2drain2 (peak)
3G1gate1 (main)
4G2gate2 (peak)
5VDMvideo decoupling (main)
6VDPvideo decoupling (peak)
7Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLC8G27LS-100AVBLC8G27LS-100AVZAlways Pb-free33
BLC8G27LS-100AVBLC8G27LS-100AVYAlways Pb-free33
文档资料
档案名称标题类型格式日期
BLC8G27LS-100AV (中文)Power LDMOS transistorData sheetpdf2014-09-30
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLC8G27LS-100AV_Data-sheetPCB Design BLC8G27LS-100AV (Data sheet)Design supportzip2014-08-22
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot1275-1_poplastic earless flanged cavity package; 6 leadsOutline drawingpdf2013-04-23
订购信息
型号订购码 (12NC)可订购的器件编号
BLC8G27LS-100AV9340 684 51517BLC8G27LS-100AVZ
BLC8G27LS-100AV9340 684 51518BLC8G27LS-100AVY
其它
标题类型日期
PCB Design BLC8G27LS-100AV (Data sheet)Design support2014-08-22
Power LDMOS transistor BLC8G27LS-100AV
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
plastic earless flanged cavity package; 6 leads BLC9G27LS-150AV
PCB Design BLC8G27LS-100AV (Data sheet) BLC8G27LS-100AV