BLF6G22L(S)-40P:功率LDMOS晶体管

LDMOS功率晶体管,适合2110 MHz至2170 MHz和1805 MHz至1880 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth,提供极佳的热稳定性
    • 更低的输出电容,可增强Doherty应用中的性能
    • 针对低内存占用量设计,提供出色的预失真性能
    • 集成式ESD保护
    • 内部匹配,便于使用
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 适用于基站的RF功率放大器
    • 2110 MHz至2170 MHz频段内的多载波应用
    • 1805 MHz至1880 MHz频段内的RF驱动器放大器
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF6G22LS-40PSOT1121B21102170402830192-c WCDMA; 2-c WCDMAProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF6G22LS-40P
CDFM4
(SOT1121B)
sot1121b_poReel 13" Q1/T1量产Standard MarkingBLF6G22LS-40P,118( 9340 653 26118 )
Bulk Pack量产Standard MarkingBLF6G22LS-40P,112( 9340 653 26112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF6G22LS-40PBLF6G22LS-40P,118Always Pb-freeNANA
BLF6G22LS-40PBLF6G22LS-40P,112Always Pb-freeNA6
文档资料
档案名称标题类型格式日期
BLF6G22L-40P_6G22LS-40P (中文)Power LDMOS transistorData sheetpdf2011-09-22
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
BLF6G22-40P_ADS-2009_ModelBLF6G22-40P ADS-2009 ModelSimulation modelzip2013-02-28
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLF6G22-40P_ADS-2011_ModelBLF6G22-40P ADS-2011 ModelSimulation modelzip2014-04-11
sot1121b_poearless flanged ceramic package; 4 leadsOutline drawingpdf2012-06-08
订购信息
型号订购码 (12NC)可订购的器件编号
BLF6G22LS-40P9340 653 26118BLF6G22LS-40P,118
BLF6G22LS-40P9340 653 26112BLF6G22LS-40P,112
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
BLF6G22-40P ADS-2009 ModelSimulation model2013-02-28
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLF6G22-40P ADS-2011 ModelSimulation model2014-04-11
Power LDMOS transistor BLF6G22L_S_40P
Power LDMOS transistor BLF6G22L_S_40P
Power LDMOS transistor BLF6G22L_S_40P
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 4 leads BLF9G38LS-90P
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
BLF6G22-40P ADS-2009 Model BLF6G22L_S_40P
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF6G22-40P ADS-2011 Model BLF6G22L_S_40P