BLF6G15L-250PBRN:功率LDMOS晶体管

250 W LDMOS功率晶体管,适合1450 MHz至1550 MHz频率范围的基站应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 增强的强度
    • 高效率
    • 极佳的热稳定性
    • 设计用于宽带操作(1450 MHz至1550 MHz)
    • 内部匹配,便于使用
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
    • 集成式电流感测
应用
    • 适用于GSM、GSM EDGE、CDMA和W-CDMA的RF功率放大器
    • 1450 MHz至1550 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range14501550MHz
PL(1dB)nominal output power at 1 dB gain compression250W
Gppower gainPL(AV) = 60 W; VDS = 28 V16.518.5dB
RLininput return lossPL(AV) = 60 W; VDS = 28 V; IDq = 1410 mA-12-8dB
ηDdrain efficiencyPL(AV) = 60 W; VDS = 28 V; 1476 MHz < f < 1511 MHz; IDq = 1410 mA3033%
PL(AV)average output power60W
ACPRadjacent channel power ratioPL(AV) = 60 W; VDS = 28 V; 1476 MHz < f < 1511 MHz; IDq = 1410 mA-32-27dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF6G15L-250PBRN
CDFM8
(SOT1110A)
sot1110a_poReel 13" Q1/T1量产Standard MarkingBLF6G15L-250PBRN:1( 9340 643 01118 )
Bulk Pack量产Standard MarkingBLF6G15L-250PBRN,1( 9340 643 01112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D1drain1
2D2drain2
3G1gate1
4G2gate2
5Ssource
6SDsense drain
7SDsense drain
8SGsense gate
9SGsense gate
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF6G15L-250PBRNBLF6G15L-250PBRN:1Always Pb-freeNANA
BLF6G15L-250PBRNBLF6G15L-250PBRN,1Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF6G15L-250PBRN (中文)Power LDMOS transistorData sheetpdf2010-11-03
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
AN109231.5GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRNApplication notepdf2011-03-14
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF6G15L-250PBRN_AN10923PCB Design BLF6G15L-250PBRN (AN10923)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF6G15L-250PBRN_ADS-2009_ModelBLF6G15L-250PBRN ADS-2009 ModelSimulation modelzip2013-02-28
sot1110a_poflanged LDMOST ceramic package; 2 mounting holes; 8 leadsOutline drawingpdf2010-04-02
订购信息
型号订购码 (12NC)可订购的器件编号
BLF6G15L-250PBRN9340 643 01118BLF6G15L-250PBRN:1
BLF6G15L-250PBRN9340 643 01112BLF6G15L-250PBRN,1
模型
标题类型日期
BLF6G15L-250PBRN ADS-2009 ModelSimulation model2013-02-28
其它
标题类型日期
PCB Design BLF6G15L-250PBRN (AN10923)Design support2012-02-24
Power LDMOS transistor BLF6G15L-250PBRN
Mounting and Soldering of RF transistors aerospace_defense
1.5GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN BLF6G15LS-250PBRN
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
flanged LDMOST ceramic package; 2 mounting holes; 8 leads BLF7G27L-200PB
BLF6G15L-250PBRN ADS-2009 Model BLF6G15LS-250PBRN
PCB Design BLF6G15L-250PBRN (AN10923) BLF6G15LS-250PBRN