BLF8G22LS-200(G)V：功率LDMOS晶体管
200 W LDMOS功率晶体管，适用于2110 MHz至2170 MHz频率范围的基站应用。
特性和优势
应用
| 产品图片  |
关键参数
| 型号 | Package version | frange [min] (MHz) | frange [max] (MHz) | PL(1dB) (W) | VDS (V) | η (%) | GP (dB) | Test signal | Product status |
|---|---|---|---|---|---|---|---|---|---|
| BLF8G22LS-200GV | SOT1244C | 2110 | 2170 | 200 | 28 | 29 | 19 | 2-c WCDMA; 2-c WCDMA | Production |
| BLF8G22LS-200V | SOT1244B | 2110 | 2170 | 200 | 28 | 29 | 19 | 2-c WCDMA; 2-c WCDMA | Production |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF8G22LS-200GV |  CDFM6 (SOT1244C) | sot1244c_po | Horizontal, Rail Pack | 量产 | Standard Marking | BLF8G22LS-200GV,12( 9340 669 11127 ) | |
| Reel 13" Q1/T1 | 量产 | Standard Marking | BLF8G22LS-200GVJ( 9340 669 11118 ) | ||||
| BLF8G22LS-200V |  CDFM6 (SOT1244B) | sot1244b_po | Reel 13" Q1/T1 | 量产 | Standard Marking | BLF8G22LS-200V,118( 9340 667 58118 ) | |
| Bulk Pack | 量产 | Standard Marking | BLF8G22LS-200V,112( 9340 667 58112 ) |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF8G22LS-200GV | BLF8G22LS-200GV,12 |   | Always Pb-free | 1 | 1 |
| BLF8G22LS-200GV | BLF8G22LS-200GVJ | | Always Pb-free | 1 | 1 |
| BLF8G22LS-200V | BLF8G22LS-200V,118 | | Always Pb-free | NA | NA |
| BLF8G22LS-200V | BLF8G22LS-200V,112 | | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF8G22LS-200V_8G22LS-200GV (中文) | Power LDMOS transistor | Data sheet | 2012-12-10 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| 75017347 | Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| PCB_Design_BLF8G22LS-200V_8G22LS-200GV_Data-sheet | PCB Design BLF8G22LS-200(G)V (Data sheet) | Design support | zip | 2012-09-28 |
| 75017604 | Gen8: the latest LDMOS RF power portfolio for wireless infrastructures | Leaflet | 2014-09-04 | |
| 75017398 | Extended video bandwidth with Doherty efficiency | Leaflet | 2013-03-21 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| Factsheet_Gen8_LDMOS_RF_pt_with_VBW | Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth | Other type | 2012-10-23 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| BLF8G22LS-200GV_ADS-2009_Model | BLF8G22LS-200GV ADS-2009 Model | Simulation model | zip | 2013-08-02 |
| sot1244b_po | earless flanged ceramic package; 6 leads | Outline drawing | 2012-05-15 | |
| sot1244c_po | earless flanged ceramic package; 6 leads | Outline drawing | 2012-05-14 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF8G22LS-200GV | 9340 669 11127 | BLF8G22LS-200GV,12 |
| BLF8G22LS-200GV | 9340 669 11118 | BLF8G22LS-200GVJ |
| BLF8G22LS-200V | 9340 667 58118 | BLF8G22LS-200V,118 |
| BLF8G22LS-200V | 9340 667 58112 | BLF8G22LS-200V,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLF8G22LS-200GV ADS-2009 Model | Simulation model | 2013-08-02 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF8G22LS-200(G)V (Data sheet) | Design support | 2012-09-28 |
- Power LDMOS transistor BLF8G22LS_200_G_V
- Power LDMOS transistor BLF8G22LS_200_G_V
- Power LDMOS transistor BLF8G22LS_200_G_V
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
- Extended video bandwidth with Doherty efficiency base_stations
- Fatigue in aluminum bond wires gan_devices
- Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V
- earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V
- BLF8G22LS-200GV ADS-2009 Model BLF8G22LS_200_G_V
- PCB Design BLF8G22LS-200(G)V (Data sheet) BLF8G22LS_200_G_V
