BLF8G20LS-260A:功率LDMOS晶体管

260 W LDMOS功率晶体管,适合1805 MHz至1880 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth,提供极佳的热稳定性
    • 设计用于宽带操作(1805 MHz至1880 MHz)
    • 非对称设计,可实现整个频段的最佳效率
    • 更低的输出电容,可增强Doherty应用中的性能
    • 针对低内存占用量设计,提供出色的预失真性能
    • 内部匹配,便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 1805 MHz至1880 MHz频率范围内的GSM多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range18051880MHz
PL(1dB)nominal output power at 1 dB gain compression260W
Gppower gainPL(AV) = 50 W; VDS = 28 V14.715.9dB
RLininput return lossPL(AV) = 50 W; VDS = 28 V; IDq = 750 mA-11-7dB
ηDdrain efficiencyPL(AV) = 50 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 750 mA4045.5%
ACPRadjacent channel power ratioPL(AV) = 50 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 750 mA-29-24dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G20LS-260A

(SOT539B)
sot539b_poReel 13" Q1/T1量产Standard MarkingBLF8G20LS-260A,118( 9340 671 96118 )
Bulk Pack量产Standard MarkingBLF8G20LS-260A,112( 9340 671 96112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D1drain1
2D2drain2
3G1gate1
4G2gate2
5Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G20LS-260ABLF8G20LS-260A,118Always Pb-freeNANA
BLF8G20LS-260ABLF8G20LS-260A,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF8G20LS-260A (中文)Power LDMOS transistorData sheetpdf2013-07-12
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G20LS-260A_Data-sheetPCB Design BLF8G20LS-260A (Data sheet)Design supportzip2013-04-05
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Biasing_Asymmetrical_Doherty_RF_power_transistorFactsheet Biasing Asymmetrical Doherty RF power transistorOther typepdf2013-03-28
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G20LS-260A_ADS-2009_ModelBLF8G20LS-260A ADS-2009 ModelSimulation modelzip2013-08-01
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G20LS-260A9340 671 96118BLF8G20LS-260A,118
BLF8G20LS-260A9340 671 96112BLF8G20LS-260A,112
模型
标题类型日期
BLF8G20LS-260A ADS-2009 ModelSimulation model2013-08-01
其它
标题类型日期
PCB Design BLF8G20LS-260A (Data sheet)Design support2013-04-05
Power LDMOS transistor BLF8G20LS-260A
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Biasing Asymmetrical Doherty RF power transistor BLF8G20LS-260A
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
BLF8G20LS-260A ADS-2009 Model BLF8G20LS-260A
PCB Design BLF8G20LS-260A (Data sheet) BLF8G20LS-260A