BLF7G27L(S)-150P：功率LDMOS晶体管

150 W LDMOS功率晶体管，适用于2500 MHz至2700 MHz频率范围的基站应用。

特性和优势
    • 主要用于降低记忆效应以提供极佳预失真能力
    • 内部匹配以方便使用
    • 极佳的强度
    • 集成ESD保护
    • 高效率
    • 主要用于宽带操作（2500 MHz至2700 MHz）
    • 低Rth提供极佳的热稳定性
    • 更低的输出电容提升了Doherty应用的性能
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 基站RF功率放大器
    • 2500 MHz 至2700 MHz频率范围内的多载波应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF7G27L-150PSOT539A25002700150282616.5NCDMA/IS95; NCDMA/IS95Production
BLF7G27LS-150PSOT539B25002700150282616.5NCDMA/IS95; NCDMA/IS95Production
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF7G27L-150P

(SOT539A)		sot539a_poReel 13" Q1/T1量产Standard MarkingBLF7G27L-150P,118( 9340 645 79118 )
BLF7G27LS-150P

(SOT539B)		sot539b_poReel 13" Q1/T1量产Standard MarkingBLF7G27LS-150P,118( 9340 645 88118 )
Bulk Pack量产Standard MarkingBLF7G27LS-150P,112( 9340 645 88112 )
BLF7G27L-150P

(SOT539A)		sot539a_poBulk Pack停产Standard MarkingBLF7G27L-150P,112( 9340 645 79112 )
停产信息
型号订购码 (12NC)最后一次购买日期最后一次交货日期替代产品
BLF7G27L-150P93406457911230-sep-1531-dec-15BLF7G27L-150P
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF7G27L-150PBLF7G27L-150P,118Always Pb-freeNANA
BLF7G27LS-150PBLF7G27LS-150P,118Always Pb-freeNANA
BLF7G27LS-150PBLF7G27LS-150P,112Always Pb-freeNANA
BLF7G27L-150PBLF7G27L-150P,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF7G27L-150P_7G27LS-150P (中文)Power LDMOS transistorData sheetpdf2013-07-12
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
AN109332.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150PApplication notepdf2010-08-16
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF7G27L-150P_7G27LS-150P_AN10933PCB Design BLF7G27L(S)-150P (AN10933)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF7G27-150P_ADS-2009_ModelBLF7G27-150P ADS-2009 ModelSimulation modelzip2013-02-28
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_135CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF7G27L-150P9340 645 79118BLF7G27L-150P,118
BLF7G27LS-150P9340 645 88118BLF7G27LS-150P,118
BLF7G27LS-150P9340 645 88112BLF7G27LS-150P,112
模型
标题类型日期
BLF7G27-150P ADS-2009 ModelSimulation model2013-02-28
其它
标题类型日期
PCB Design BLF7G27L(S)-150P (AN10933)Design support2012-02-24
Power LDMOS transistor BLF7G27L_S_150P
Power LDMOS transistor BLF7G27L_S_150P
Power LDMOS transistor BLF7G27L_S_150P
Mounting and Soldering of RF transistors aerospace_defense
2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P BLF7G27L_S_150P
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
BLF7G27-150P ADS-2009 Model BLF7G27L_S_150P
PCB Design BLF7G27L(S)-150P (AN10933) BLF7G27L_S_150P
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