BLF8G22LS-205V：Power LDMOS transistor _ BDTIC 中国领先电子元器件代理商

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BLF8G22LS-205V：Power LDMOS transistor

205 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2100 MHz to 2200 MHz.

特性和优势

Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用

RF power amplifiers for base stations and multi carrier applications in the 2100 MHz to 2200 MHz frequency range

产品图片

关键参数

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
f_range	frequency range		2100		2200	MHz
P_L(1dB)	nominal output power at 1 dB gain compression			205		W
G_p	power gain	P_L(AV) = 50.1 W; V_DS = 28 V ^[0]	17.1	18.3		dB
RL_in	input return loss	P_L(AV) = 50.1 W; V_DS = 28 V ^[0]		-10	-6	dB
η_D	drain efficiency	P_L(AV) = 50.1 W; V_DS = 28 V ^[0]	27.5	32.5		%
ACPR	adjacent channel power ratio	P_L(AV) = 50.1 W; V_DS = 28 V ^[0]		-30	-25	dBc

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
BLF8G22LS-205V	CDFM6 (SOT1239B)	sot1239b_po		Reel 13" Q1/T1	可提供样品	Standard Marking	BLF8G22LS-205VJ( 9340 690 84118 )
BLF8G22LS-205V	CDFM6 (SOT1239B)	sot1239b_po		Bulk Pack	可提供样品	Standard Marking	BLF8G22LS-205VU( 9340 690 84112 )

引脚配置信息

Pin	Symbol	Description	外形简图	图形符号
1	D	drain
2	G	gate
3	S	source
4	D.L	decoupling lead
5	D.L	decoupling lead
6	n.c	not connected
7	n.c	not connected

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
BLF8G22LS-205V	BLF8G22LS-205VJ		Always Pb-free	NA	NA
BLF8G22LS-205V	BLF8G22LS-205VU		Always Pb-free	NA	NA

文档资料

档案名称	标题	类型	格式	日期
AN10896	Mounting and Soldering of RF transistors	Application note	pdf	2015-03-24
75017347	Enabling the Mobile Experience	Brochure	pdf	2013-02-05
PCB_Design_BLF8G22LS-205V_Data-sheet	PCB Design BLF8G22LS-205V (Data sheet)	Design support	zip	2015-07-24
75017604	Gen8: the latest LDMOS RF power portfolio for wireless infrastructures	Leaflet	pdf	2014-09-04
fatigue_in_aluminum_bond_wires	Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBW	Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth	Other type	pdf	2012-10-23
NXP_RF_manual_19th_edition	RF Manual 19th edition: Application and design manual for High Performance RF products May 2015	Other type	pdf	2015-05-19
sot1239b_po	earless flanged LDMOST ceramic package; 6 leads	Outline drawing	pdf	2013-06-13

订购信息

型号	订购码 (12NC)	可订购的器件编号
BLF8G22LS-205V	9340 690 84118	BLF8G22LS-205VJ
BLF8G22LS-205V	9340 690 84112	BLF8G22LS-205VU

其它

标题	类型	日期
PCB Design BLF8G22LS-205V (Data sheet)	Design support	2015-07-24

Mounting and Soldering of RF transistors aerospace_defense

Enabling the Mobile Experience rf

Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations

Fatigue in aluminum bond wires gan_devices

Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V

RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf

earless flanged LDMOST ceramic package; 6 leads BLF8G38LS-75V

PCB Design BLF8G22LS-205V (Data sheet) BLF8G22LS-205V

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