BLP8G21S-160PV:功率LDMOS晶体管

160 W LDMOS功率晶体管,适合1880 MHz至2025 MHz频率范围的基站应用。

特性和优势
    • 设计用于宽带操作(1880 MHz至2025 MHz)
    • 去耦引线,可改进视频带宽
    • 出色的耐用性
    • 高效率
    • 极佳的热稳定性
    • 内部匹配,便于使用
    • 高功率增益
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适合1880 MHz至2025 MHz频率范围内基站和多载波应用的RF功率放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range18802025MHz
PL(1dB)nominal output power at 1 dB gain compression160W
Gppower gainPL(AV) = 20 W; VDS = 28 V16.317.5dB
RLininput return lossPL(AV) = 20 W; VDS = 28 V; IDq = 600 mA-10-6dB
ηDdrain efficiencyPL(AV) = 20 W; VDS = 28 V; 1880 MHz < f < 1920 MHz; IDq = 600 mA2631%
ACPRadjacent channel power ratioPL(AV) = 20 W; VDS = 28 V; 1880 MHz < f < 1920 MHz; IDq = 600 mA-30-25dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLP8G21S-160PV
HSOP6F
(SOT1221-1)
sot1221-1_poReel 13" Q1/T1 in Drypack量产Standard MarkingBLP8G21S-160PVY( 9340 677 82518 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1GATEgate
2GATEgate
3DLdecoupling lead
4DRAINdrain
5DRAINdrain
6DLdecoupling lead
7SOURCEsource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLP8G21S-160PVBLP8G21S-160PVY33
文档资料
档案名称标题类型格式日期
BLP8G21S-160PV (中文)power LDMOS transistorData sheetpdf2014-07-01
AN11183Mounting and soldering of RF transistors in over-molded plastic packagesApplication notepdf2012-11-06
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLP8G21S-160PV_Data-sheetPCB Design BLP8G21S-160PV (Data sheet)Design supportzip2014-05-27
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
Test_Report_BLP8G21S-160PV_Doherty_1880-2025MHzTest Report BLP8G21S-160PV Doherty 1880-2025MHzOther typepdf2013-08-20
BLP8G21S-160PV_ADS-2009_ModelBLP8G21S-160PV ADS-2009 ModelSimulation modelzip2013-08-06
BLP8G21S-160PV_ADS-2012_ModelBLP8G21S-160PV ADS-2012 ModelSimulation modelzip2014-05-02
sot1221-1_poplastic, heatsink small outline package; 6 leads(flat)Outline drawingpdf2012-07-24
订购信息
型号订购码 (12NC)可订购的器件编号
BLP8G21S-160PV9340 677 82518BLP8G21S-160PVY
模型
标题类型日期
BLP8G21S-160PV ADS-2009 ModelSimulation model2013-08-06
BLP8G21S-160PV ADS-2012 ModelSimulation model2014-05-02
其它
标题类型日期
PCB Design BLP8G21S-160PV (Data sheet)Design support2014-05-27
power LDMOS transistor BLP8G21S-160PV
Mounting and soldering of RF transistors in over-molded plastic packages BLP8G21S-160PV
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Test Report BLP8G21S-160PV Doherty 1880-2025MHz BLP8G21S-160PV
plastic, heatsink small outline package; 6 leads(flat) BLP8G21S-160PV
BLP8G21S-160PV ADS-2009 Model BLP8G21S-160PV
BLP8G21S-160PV ADS-2012 Model BLP8G21S-160PV
PCB Design BLP8G21S-160PV (Data sheet) BLP8G21S-160PV