BLF6G38-10G:WiMAX功率LDMOS晶体管

10 W LDMOS功率晶体管,适用于3400 MHz至3600 MHz频率范围的基站应用。

特性和优势
    • 极佳的强度
    • 内部匹配以方便使用
    • 极佳的热稳定性
    • 集成ESD保护
    • 高效率
    • 主要用于宽带操作
    • 引脚低镀金厚度
    • 允许32 V的最大VDS操作
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 基站RF功率放大器
    • 3400 MHz 至3600 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range34003600MHz
PL(1dB)nominal output power at 1 dB gain compression10W
Gppower gainPL(AV) = 2 W; VDS = 28 V1314dB
RLininput return lossPL(AV) = 2 W; VDS = 28 V; IDq = 130 mA-10dB
ηDdrain efficiencyPL(AV) = 2 W; VDS = 28 V; 3400 MHz < f < 3600 MHz; IDq = 130 mA1820%
PL(AV)average output power2W
ACPR1980kadjacent channel power ratio (1980 kHz)PL(AV) = 2 W; VDS = 28 V; 3400 MHz < f < 3600 MHz; IDq = 130 mA [0]-64-61dBc
ACPR885kadjacent channel power ratio (885 kHz)PL(AV) = 2 W; VDS = 28 V; 3400 MHz < f < 3600 MHz; IDq = 130 mA [0]-49-46dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF6G38-10G
CDFM2
(SOT975C)
sot975c_poReel 13" Q1/T1量产Standard MarkingBLF6G38-10G,118( 9340 618 47118 )
Bulk Pack量产Standard MarkingBLF6G38-10G,112( 9340 618 47112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF6G38-10GBLF6G38-10G,118Always Pb-freeNANA
BLF6G38-10GBLF6G38-10G,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF6G38-10_BLF6G38-10G (中文)WiMAX power LDMOS transistorData sheetpdf2015-01-06
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF6G38-10G_ADS-2009_ModelBLF6G38-10G ADS-2009 ModelSimulation modelzip2013-02-28
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
sot975c_poearless flanged ceramic package; 2 leadsOutline drawingpdf2008-07-09
订购信息
型号订购码 (12NC)可订购的器件编号
BLF6G38-10G9340 618 47118BLF6G38-10G,118
BLF6G38-10G9340 618 47112BLF6G38-10G,112
模型
标题类型日期
BLF6G38-10G ADS-2009 ModelSimulation model2013-02-28
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
WiMAX power LDMOS transistor BLF6G38-10G
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS6G2731-6G
BLF6G38-10G ADS-2009 Model BLF6G38-10G
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30