BLF6G10(LS)-200RN：功率LDMOS晶体管
200 W LDMOS功率晶体管，适合700 MHz至1000 MHz频率范围的基站应用
特性和优势
应用
| 产品图片 |
关键参数
| 型号 | Package version | frange [min] (MHz) | frange [max] (MHz) | PL(1dB) (W) | VDS (V) | η (%) | GP (dB) | Test signal | Product status |
|---|---|---|---|---|---|---|---|---|---|
| BLF6G10LS-200RN | SOT502B | 700 | 1000 | 200 | 28 | 28.5 | 20 | 2-c WCDMA; 2-c WCDMA | Production |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G10LS-200RN |  (SOT502B) | sot502b_po | Reel 13" Q1/T1 | 量产 | Standard Marking | BLF6G10LS-200RN,11( 9340 632 55118 ) | |
| Bulk Pack | 量产 | Standard Marking | BLF6G10LS-200RN:11( 9340 632 55112 ) |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF6G10LS-200RN | BLF6G10LS-200RN,11 |   | Always Pb-free | NA | NA |
| BLF6G10LS-200RN | BLF6G10LS-200RN:11 | | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF6G10-200RN_10LS-200RN (中文) | Power LDMOS transistor | Data sheet | 2010-01-21 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| 75017347 | Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| BLF6G10-200R_ADS-2009_Model | BLF6G10-200R ADS-2009 Model | Simulation model | zip | 2013-02-28 |
| sot502b_po | earless flanged ceramic package; 2 leads | Outline drawing | 2007-05-08 | |
| SOT502B_112 | CDFM2; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF6G10LS-200RN | 9340 632 55118 | BLF6G10LS-200RN,11 |
| BLF6G10LS-200RN | 9340 632 55112 | BLF6G10LS-200RN:11 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLF6G10-200R ADS-2009 Model | Simulation model | 2013-02-28 |
- Power LDMOS transistor BLF6G10_LS_200RN
- Power LDMOS transistor BLF6G10_LS_200RN
- Power LDMOS transistor BLF6G10_LS_200RN
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- earless flanged ceramic package; 2 leads BLS7G3135LS-200
- CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
- BLF6G10-200R ADS-2009 Model BLF6G10_LS_200RN
