BLC8G24LS-240AV:LDMOS功率晶体管

240 W LDMOS封装非对称Doherty功率晶体管,适合于2300 MHz至2400 MHz频率范围内的基站应用。

特性和优势
    • 出色的耐用性
    • 高效
    • 低热电阻,提供出色的热稳定性
    • 专为宽带操作而设计(2300 MHz到2400 MHz)
    • 采用非对称设计,实现整个频段内的最优效率
    • 输出电容更低,Doherty应用的性能更好
    • 专为低内存占用量设计,因此数字预失真性能极佳
    • 内部匹配,易于使用
    • 集成ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • RF功率放大器,适合于频率范围为2300 MHz至2400 MHz的基站和多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range23002400MHz
PL(1dB)nominal output power at 1 dB gain compression240W
Gppower gainPL(AV) = 56 W; VDS = 28 V13.815dB
RLininput return lossPL(AV) = 56 W; VDS = 28 V; IDq = 500 mA-10-6dB
ηDdrain efficiencyPL(AV) = 56 W; VDS = 28 V; 2300 MHz < f < 2400 MHz; IDq = 500 mA3944%
ACPRadjacent channel power ratioPL(AV) = 56 W; VDS = 28 V; 2300 MHz < f < 2400 MHz; IDq = 500 mA-29-25dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLC8G24LS-240AV
DFM8
(SOT1252-1)
sot1252-1_poTray, NonBakeable, Multiple in Drypack量产Standard MarkingBLC8G24LS-240AVZ( 9340 679 95517 )
Reel 13" Q1/T1 in Drypack量产Standard MarkingBLC8G24LS-240AVY( 9340 679 95518 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D2Pdrain2 (peak)
2D1Mdrain1 (main)
3G1Mgate1 (main)
4G2Pgate2 (peak)
5Ssource
6VDMvideo decoupling (main)
7n.c.not connected
8n.c.not connected
9VDPvideo decoupling (peak)
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLC8G24LS-240AVBLC8G24LS-240AVZAlways Pb-free33
BLC8G24LS-240AVBLC8G24LS-240AVYAlways Pb-free33
文档资料
档案名称标题类型格式日期
BLC8G24LS-240AV (中文)Power LDMOS transistorData sheetpdf2015-07-29
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLC8G24LS-240AV_Data-sheetPCB Design BLC8G24LS-240AV (Data sheet)Design supportzip2014-12-19
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLC8G24LS-240AV_ADS-2009_ModelBLC8G24LS-240AV ADS-2009 ModelSimulation modelzip2013-09-20
sot1252-1_poplastic earless flanged cavity package; 8 leadsOutline drawingpdf2013-05-28
订购信息
型号订购码 (12NC)可订购的器件编号
BLC8G24LS-240AV9340 679 95517BLC8G24LS-240AVZ
BLC8G24LS-240AV9340 679 95518BLC8G24LS-240AVY
模型
标题类型日期
BLC8G24LS-240AV ADS-2009 ModelSimulation model2013-09-20
其它
标题类型日期
PCB Design BLC8G24LS-240AV (Data sheet)Design support2014-12-19
Power LDMOS transistor BLC8G24LS-240AV
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
plastic earless flanged cavity package; 8 leads BLC8G27LS-240AV
BLC8G24LS-240AV ADS-2009 Model BLC8G24LS-240AV
PCB Design BLC8G24LS-240AV (Data sheet) BLC8G24LS-240AV