BLF8G20LS-200V：功率LDMOS晶体管
200 W LDMOS功率晶体管，具有改进的视频带宽，适合1800 MHz至2000 MHz频率范围的基站应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1800 | 2000 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 200 | W | |||
| Gp | power gain | PL(AV) = 55 W; VDS = 28 V | 16.3 | 17.5 | 19.2 | dB |
| RLin | input return loss | PL(AV) = 55 W; VDS = 28 V; IDq = 1600 mA | -15 | -7 | dB | |
| ηD | drain efficiency | PL(AV) = 55 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 1600 mA | 29 | 33 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 55 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 1600 mA | -30 | -26 | dBc |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF8G20LS-200V |  CDFM6 (SOT1120B) | sot1120b_po | Bulk Pack | 量产 | Standard Marking | BLF8G20LS-200V,112( 9340 665 25112 ) | |
| Reel 13" Q1/T1 in LargePack | 量产 | Standard Marking | BLF8G20LS-200VZ( 9340 665 25134 ) | ||||
| Reel 13" Q1/T1 | 量产 | Standard Marking | BLF8G20LS-200V,118( 9340 665 25118 ) | ||||
| Reel 7" Q1/T1 | 量产 | Standard Marking | BLF8G20LS-200V,115( 9340 665 25115 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D | drain |  |  |
| 2 | G | gate | ||
| 3 | S | source | ||
| 4 | v.d | video decoupling | ||
| 5 | v.d | video decoupling | ||
| 6 | n.c | not connected | ||
| 7 | n.c | not connected |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF8G20LS-200V | BLF8G20LS-200V,112 |   | Always Pb-free | NA | NA |
| BLF8G20LS-200V | BLF8G20LS-200VZ | | Always Pb-free | NA | NA |
| BLF8G20LS-200V | BLF8G20LS-200V,118 | | Always Pb-free | NA | NA |
| BLF8G20LS-200V | BLF8G20LS-200V,115 | | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF8G20LS-200V (中文) | Power LDMOS transistor | Data sheet | 2013-10-22 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| 75017347 | Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| PCB_Design_BLF8G20LS-200V_Data-sheet | PCB Design BLF8G20LS-200V (Data sheet) | Design support | zip | 2012-10-04 |
| 75017604 | Gen8: the latest LDMOS RF power portfolio for wireless infrastructures | Leaflet | 2014-09-04 | |
| 75017398 | Extended video bandwidth with Doherty efficiency | Leaflet | 2013-03-21 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| Factsheet_Gen8_LDMOS_RF_pt_with_VBW | Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth | Other type | 2012-10-23 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| NXP_RFpower_Lib_V09p0 | RF Power Model Library for Microwave Office® | Simulation model | zip | 2014-11-11 |
| NXP_RFpower_Manual_MWO_20141111 | RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 | |
| NXP_RFPower_Simulation_Example | RF Power Simulation Example for Microwave Office® | Simulation model | zip | 2012-06-11 |
| sot1120b_po | earless flanged LDMOST ceramic package; 6 leads | Outline drawing | 2012-06-15 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF8G20LS-200V | 9340 665 25112 | BLF8G20LS-200V,112 |
| BLF8G20LS-200V | 9340 665 25134 | BLF8G20LS-200VZ |
| BLF8G20LS-200V | 9340 665 25118 | BLF8G20LS-200V,118 |
| BLF8G20LS-200V | 9340 665 25115 | BLF8G20LS-200V,115 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| RF Power Model Library for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Simulation Example for Microwave Office® | Simulation model | 2012-06-11 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF8G20LS-200V (Data sheet) | Design support | 2012-10-04 |
- Power LDMOS transistor BLF8G20LS-200V
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
- Extended video bandwidth with Doherty efficiency base_stations
- Fatigue in aluminum bond wires gan_devices
- Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- earless flanged LDMOST ceramic package; 6 leads BLF9G20LS-160V
- RF Power Model Library for Microwave Office® CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- PCB Design BLF8G20LS-200V (Data sheet) BLF8G20LS-200V
