BLF8G27LS-100(G)V：功率LDMOS晶体管

100 W LDMOS功率晶体管，具有改进的视频带宽，适合2500 MHz至2700 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth，提供极佳的热稳定性
    • 去耦引线，可改进视频带宽（典型值：110 MHz）
    • 设计用于宽带操作（2500 MHz至2700 MHz）
    • 更低的输出电容，可增强Doherty应用中的性能
    • 针对低内存占用量设计，提供出色的预失真性能
    • 内部匹配，便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于基站的RF功率放大器
    • 2500 MHz至2700 MHz频率范围内的多载波应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF8G27LS-100GVSOT1244C250027001002828172-c WCDMA; 2-c WCDMAProduction
BLF8G27LS-100VSOT1244B250027001002828172-c WCDMA; 2-c WCDMAProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G27LS-100GV
CDFM6
(SOT1244C)		sot1244c_poHorizontal, Rail Pack量产Standard MarkingBLF8G27LS-100GVQ( 9340 679 16127 )
Reel 13" Q1/T1量产Standard MarkingBLF8G27LS-100GVJ( 9340 679 16118 )
BLF8G27LS-100V
CDFM6
(SOT1244B)		sot1244b_poReel 13" Q1/T1量产Standard MarkingBLF8G27LS-100V,118( 9340 670 73118 )
Bulk Pack量产Standard MarkingBLF8G27LS-100V,112( 9340 670 73112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G27LS-100GVBLF8G27LS-100GVQAlways Pb-freeNA
BLF8G27LS-100GVBLF8G27LS-100GVJAlways Pb-freeNA
BLF8G27LS-100VBLF8G27LS-100V,118Always Pb-free
BLF8G27LS-100VBLF8G27LS-100V,112Always Pb-free
文档资料
档案名称标题类型格式日期
BLF8G27LS-100V_27LS-100GV (中文)Power LDMOS transistorData sheetpdf2013-09-26
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G27LS-100V_27LS-100GV_Data-sheetPCB Design BLF8G27LS-100(G)V (Data sheet)Design supportzip2013-09-30
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
75017398Extended video bandwidth with Doherty efficiencyLeafletpdf2013-03-21
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G27-100V_ADS-2009_ModelBLF8G27-100V ADS-2009 ModelSimulation modelzip2013-08-01
BLF8G27LS-100GV_ADS-2009_ModelBLF8G27LS-100GV ADS-2009 ModelSimulation modelzip2013-09-05
BLF8G27LS-100GV_ADS-2011_ModelBLF8G27LS-100GV ADS-2011 ModelSimulation modelzip2013-09-05
sot1244b_poearless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-15
sot1244c_poearless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-14
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G27LS-100GV9340 679 16127BLF8G27LS-100GVQ
BLF8G27LS-100GV9340 679 16118BLF8G27LS-100GVJ
BLF8G27LS-100V9340 670 73118BLF8G27LS-100V,118
BLF8G27LS-100V9340 670 73112BLF8G27LS-100V,112
模型
标题类型日期
BLF8G27-100V ADS-2009 ModelSimulation model2013-08-01
BLF8G27LS-100GV ADS-2009 ModelSimulation model2013-09-05
BLF8G27LS-100GV ADS-2011 ModelSimulation model2013-09-05
其它
标题类型日期
PCB Design BLF8G27LS-100(G)V (Data sheet)Design support2013-09-30
Power LDMOS transistor BLF8G27LS_100_G_V
Power LDMOS transistor BLF8G27LS_100_G_V
Power LDMOS transistor BLF8G27LS_100_G_V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Extended video bandwidth with Doherty efficiency base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V
BLF8G27-100V ADS-2009 Model BLF8G27LS_100_G_V
BLF8G27LS-100GV ADS-2009 Model BLF8G27LS_100_G_V
BLF8G27LS-100GV ADS-2011 Model BLF8G27LS_100_G_V
PCB Design BLF8G27LS-100(G)V (Data sheet) BLF8G27LS_100_G_V
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