MD7IC1812N: 1805-2170 MHz,1.3 W平均值,28 V单载波W-CDMA LDMOS宽带射频集成功率放大器

特性
  • 提供串联等效大信号阻抗参数和共源S参数
  • 集成静态电流温度补偿,具有启用/禁用功能
  • 专为数字预失真纠错系统而设计
  • 为Doherty应用进行了优化
  • 符合RoHS规范
TO-270WB-14, TO-270WBG-14 Package Images
数据手册 (1)
名称/描述Modified Date
MD7IC1812N, MD7IC1812GN 1805–2170 MHz, 1.3 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers Data Sheet (REV 0) PDF (460.0 kB) MD7IC1812N [English]14 May 2015
应用说明 (5)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D [English]18 Mar 2016
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins (REV B) PDF (77.4 kB) 98ASA10653D [English]26 Feb 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MD7IC1812NR1Active180521702840.8121.3 @ AVGW-CDMA31.5 @ 1880142.9I/OABLDMOS
MD7IC1812GNR1Active180521702840.8121.3 @ AVGW-CDMA31.5 @ 1880142.9I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270 WB-14 GULL98ASA10653DMPQ - 500 REELPOQ - 500 BOXActiveMD7IC1812GNR1MD7IC1812GNR1.pdf3260
TO-270 WB-14 LEAD98ASA10650DMPQ - 500 REELPOQ - 500 BOXActiveMD7IC1812NR1MD7IC1812NR1.pdf3260
MD7IC1812N, MD7IC1812GN 1805–2170 MHz, 1.3 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers Data Sheet MD7IC1812N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
MD7IC1812N PCB DXF file MD7IC1812N
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins MMRF2010N
MD7IC1812GNR1.pdf MD7IC1812N
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins MMRF2010N
MD7IC1812NR1.pdf MD7IC1812N