MD7IC1812N: 1805-2170 MHz, 1.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

TO-270WB-14, TO-270WBG-14 Package Images
特性
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
Data Sheets (1)
Name/DescriptionModified Date
MD7IC1812N, MD7IC1812GN 1805–2170 MHz, 1.3 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers Data Sheet (REV 0) PDF (460.0 kB) MD7IC1812N14 May 2015
Application Notes (5)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D18 Mar 2016
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins (REV B) PDF (77.4 kB) 98ASA10653D26 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MD7IC1812NR1Active180521702840.8121.3 @ AVGW-CDMA31.5 @ 1880142.9I/OABLDMOS
MD7IC1812GNR1Active180521702840.8121.3 @ AVGW-CDMA31.5 @ 1880142.9I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270 WB-14 GULL98ASA10653DMPQ - 500 REELPOQ - 500 BOXActiveMD7IC1812GNR1MD7IC1812GNR1.pdf3260
TO-270 WB-14 LEAD98ASA10650DMPQ - 500 REELPOQ - 500 BOXActiveMD7IC1812NR1MD7IC1812NR1.pdf3260
MD7IC1812N, MD7IC1812GN 1805–2170 MHz, 1.3 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers Data Sheet MD7IC1812N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
MD7IC1812N PCB DXF file MD7IC1812N
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins MMRF2010N
MD7IC1812GNR1.pdf MD7IC1812N
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins MMRF2010N
MD7IC1812NR1.pdf MD7IC1812N