MHE1003N: 2450 MHz,220 W连续波,26 V射频功率LDMOS晶体管,适用于消费电子和商用烹饪

特性
  • 提供串联等效大信号阻抗参数和共源S参数
  • 内部预匹配,简单易用
  • 工作电压可达28 Vdc
  • 集成的ESD保护
  • 150°C外壳工作温度
  • 能承受225°C芯片温度
  • 符合RoHS规范
特性
  • 消费电子烹饪
  • 商用烹饪
OM-780-2L Package Image
数据手册 (1)
名称/描述Modified Date
MHE1003N 220 W CW, 2450 MHz, 26 V Data Sheet (REV 0) PDF (375.9 kB) MHE1003N [English]22 Jul 2016
应用说明 (2)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D [English]22 Mar 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MHE1003NR3Active245024502653.1206220 @ CWCW14.1 @ 245063.50.24I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM780-2 Straight Cu98ASA10831DMPQ - 250 REELPOQ - 250 REELActiveMHE1003NR3MHE1003NR3.pdf3260
MHE1003N 220 W CW, 2450 MHz, 26 V Data Sheet MHE1003N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
MHE1003N 2450 MHz PCB Device Reference Circuit DXF file MHE1003N
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
MHE1003NR3.pdf MHE1003N