MHE1003N: 2450 MHz, 220 W CW, 26 V RF LDMOS Transistor for Consumer and Commercial Cooking
OM-780-2L Package Image
特性
- Characterized with series equivalent large-signal impedance parameters and common source S-parameters
- Internally pre-matched for ease of use
- Qualified for operation at 28 Vdc
- Integrated ESD protection
- 150°C case operating temperature
- 225°C die temperature capability
- RoHS Compliant
特性
- Consumer cooking
- Commercial cooking
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MHE1003N 220 W CW, 2450 MHz, 26 V Data Sheet (REV 0) PDF (375.9 kB) MHE1003N | 22 Jul 2016 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D | 22 Mar 2016 |
Printed Circuit Boards
- MHE1003N 2450 MHz PCB Device Reference Circuit DXF file (REV 4) ZIP MHE1003N_2450_PCB 7/22/2016
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MHE1003NR3 | Active | 2450 | 2450 | 26 | 53.1 | 206 | 220 @ CW | CW | 14.1 @ 2450 | 63.5 | 0.24 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM780-2 Straight Cu | 98ASA10831D | MPQ - 250 REELPOQ - 250 REEL | Active | MHE1003NR3 | MHE1003NR3.pdf |   | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- MHE1003N 2450 MHz PCB Device Reference Circuit DXF file MHE1003N
- 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
- MHE1003NR3.pdf MHE1003N
