MHT1001H: 2450 MHz,190 W连续波,28 V工业加热,耐用型LDMOS射频功率晶体管

特性
  • 2450 MHz时的典型连续波性能:VDD = 28 Vdc,IDQ = 1900 mA,输出功率 = 190 W 功率增益:13.2 dB 漏极效率:46.2%
  • 在28 Vdc,2340 MHz,190 W连续波输出功率时,能承受10:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 内部匹配,简便易用
  • 工作电压最高可达32 VDD
  • 集成的ESD保护
  • 符合RoHS规范
  • 采用盘卷包装。R5后缀 = 50个,56 mm卷带宽度,13英寸卷盘。
NI-1230 Package Image
数据手册 (1)
名称/描述Modified Date
MHT1001HR5 2450 MHz, 190 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (533.0 kB) MHT1001H [English]30 May 2014
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]05 Apr 2016
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MHT1001HR5Active245024502852.8190190 @ CW1-Tone13.2 @ 245046.20.22I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 REELActiveMHT1001HR5MHT1001HR5.pdf260
MHT1001HR5 2450 MHz, 190 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor - Data Sheet MHT1001H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MHT1001HR5.pdf MHT1001H