MHT1001H: 2450 MHz, 190 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor

NI-1230 Package Image
特性
  • Typical CW Performance at 2450 MHz: VDD = 28 Vdc, IDQ = 1900 mA, Pout = 190 W Power Gain: 13.2 dB Drain Efficiency: 46.2%
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 W CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MHT1001HR5 2450 MHz, 190 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (533.0 kB) MHT1001H30 May 2014
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MHT1001HR5Active245024502852.8190190 @ CW1-Tone13.2 @ 245046.20.22I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 REELActiveMHT1001HR5MHT1001HR5.pdf260
MHT1001HR5 2450 MHz, 190 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor - Data Sheet MHT1001H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MHT1001HR5.pdf MHT1001H