MHT1001H: 2450 MHz, 190 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor

Typical CW Performance at 2450 MHz: VDD = 28 Vdc, IDQ = 1900 mA, Pout = 190 W Power Gain: 13.2 dB Drain Efficiency: 46.2%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 W CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.

Name/Description	Modified Date
MHT1001HR5 2450 MHz, 190 W CW, 28 V Industrial Heating, Rugged RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (533.0 kB) MHT1001H	30 May 2014

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014

Name/Description	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212	19 Jan 2004

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Name/Description	Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C	05 Apr 2016

Product	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MHT1001HR5	Active	2450	2450	28	52.8	190	190 @ CW	1-Tone	13.2 @ 2450	46.2	0.22	I/O	AB	LDMOS

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	RoHS / Pb FreeChina RoHS Lookup	PPT (°C)
NI-1230	98ASB16977C	MPQ - 50 REELPOQ - 50 REEL	Active	MHT1001HR5	MHT1001HR5.pdf		260