MMRF1009H: 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

名称/描述	Modified Date
MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet (REV 0) PDF (793.4 kB) MMRF1009H [English]	02 Jan 2014

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

名称/描述	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]	16 May 2016

名称/描述	Modified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C [English]	22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]	22 Mar 2016

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF1009HSR5	Active		960	1215	50	57	500	500 @ Peak	Pulse	19.7 @ 1030	62	0.044	I/O	AB	LDMOS
MMRF1009HR5	Active		960	1215	50	57	500	500 @ Peak	Pulse	19.7 @ 1030	62	0.044	I/O	AB	LDMOS

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-780S	98ASB16718C	MPQ - 50 REELPOQ - 50 REEL	Active	MMRF1009HR5	MMRF1009HR5.pdf		260
NI-780S	98ASB16718C	MPQ - 50 REELPOQ - 50 REEL	Active	MMRF1009HSR5	MMRF1009HSR5.pdf		260