MMRF1009H: 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs
NI-780H-2L, NI-780S-2L Package Image
特性
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
- These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet (REV 0) PDF (793.4 kB) MMRF1009H | 02 Jan 2014 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C | 22 Mar 2016 |
| 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C | 22 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF1009HSR5 | Active | 960 | 1215 | 50 | 57 | 500 | 500 @ Peak | Pulse | 19.7 @ 1030 | 62 | 0.044 | I/O | AB | LDMOS | |
| MMRF1009HR5 | Active | 960 | 1215 | 50 | 57 | 500 | 500 @ Peak | Pulse | 19.7 @ 1030 | 62 | 0.044 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780S | 98ASB16718C | MPQ - 50 REELPOQ - 50 REEL | Active | MMRF1009HR5 | MMRF1009HR5.pdf |   | 260 |
| MPQ - 50 REELPOQ - 50 REEL | Active | MMRF1009HSR5 | MMRF1009HSR5.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
- 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
- MMRF1009HR5.pdf MMRF1009H
- MMRF1009HSR5.pdf MMRF1009H
