MMRF1009H: 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

NI-780H-2L, NI-780S-2L Package Image
特性
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
Data Sheets (1)
Name/DescriptionModified Date
MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet (REV 0) PDF (793.4 kB) MMRF1009H02 Jan 2014
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C22 Mar 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF1009HSR5Active96012155057500500 @ PeakPulse19.7 @ 1030620.044I/OABLDMOS
MMRF1009HR5Active96012155057500500 @ PeakPulse19.7 @ 1030620.044I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780S98ASB16718CMPQ - 50 REELPOQ - 50 REELActiveMMRF1009HR5MMRF1009HR5.pdf260
MPQ - 50 REELPOQ - 50 REELActiveMMRF1009HSR5MMRF1009HSR5.pdf260
MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet MMRF1009H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
MMRF1009HR5.pdf MMRF1009H
MMRF1009HSR5.pdf MMRF1009H