MMRF1013H: 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs _ BDTIC 中国领先电子元器件代理商

MMRF1013H: 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs

特性

Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Push-Pull Operation
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.

NI-1230H-4S, NI-1230S-4S Package Image

数据手册 (1)

名称/描述	Modified Date
MMRF1013HR5, MMRF1013HSR5 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs - Data Sheet (REV 0) PDF (864.2 kB) MMRF1013H [English]	25 Jul 2014

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]	16 May 2016

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]	05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C [English]	23 Feb 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF1013HSR5	Active		2700	2900	30	55.1	320	320 @ Peak	Pulse	13.3 @ 2900	50.5	0.06	Unmatched	AB	LDMOS
MMRF1013HR5	Active		2700	2900	30	55.1	320	320 @ Peak	Pulse	13.3 @ 2900	50.5	0.06	Unmatched	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-1230	98ASB16977C	MPQ - 50 REELPOQ - 50 REEL	Active	MMRF1013HR5	MMRF1013HR5.pdf		260
NI-1230S	98ARB18247C	MPQ - 50 REELPOQ - 50 REEL	Active	MMRF1013HSR5	MMRF1013HSR5.pdf		260

MMRF1013HR5, MMRF1013HSR5 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs - Data Sheet MMRF1013H

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Aerospace and Defense Solutions Brochure MMRF5300N

RF Products Selector Guide MMT20303H

98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MMRF1013HR5.pdf MMRF1013H

98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MMRF1013HSR5.pdf MMRF1013H

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