MMRF1013H: 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs

NI-1230H-4S, NI-1230S-4S Package Image
特性
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MMRF1013HR5, MMRF1013HSR5 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs - Data Sheet (REV 0) PDF (864.2 kB) MMRF1013H25 Jul 2014
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C23 Feb 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF1013HSR5Active270029003055.1320320 @ PeakPulse13.3 @ 290050.50.06UnmatchedABLDMOS
MMRF1013HR5Active270029003055.1320320 @ PeakPulse13.3 @ 290050.50.06UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 REELActiveMMRF1013HR5MMRF1013HR5.pdf260
NI-1230S98ARB18247CMPQ - 50 REELPOQ - 50 REELActiveMMRF1013HSR5MMRF1013HSR5.pdf260
MMRF1013HR5, MMRF1013HSR5 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs - Data Sheet MMRF1013H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MMRF1013HR5.pdf MMRF1013H
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MMRF1013HSR5.pdf MMRF1013H