MMRF1020-04N: 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors _ BDTIC 中国领先电子元器件代理商

MMRF1020-04N: 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors

特性

Production Tested in a Symmetrical Doherty Configuration
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

OM-780-4L, OM-780G-4L Package Image

数据手册 (1)

名称/描述	Modified Date
MMRF1020-04NR3, MMRF1020-04GNR3 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors - Data Sheet (REV 0) PDF (512.0 kB) MMRF1020-04N [English]	10 Feb 2014

应用说明 (3)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]	16 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D [English]	22 Mar 2016
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D [English]	22 Mar 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF1020-04GNR3	Active		720	960	48	53	200	100 @ AVG	W-CDMA	19.5 @ 920	48.5	0.45	Input	AB	LDMOS
MMRF1020-04NR3	Active		720	960	48	53	200	100 @ AVG	W-CDMA	19.5 @ 920	48.5	0.45	Input	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
OM780-4 GULL PLASTIC	98ASA10834D	MPQ - 250 REELPOQ - 250 REEL	Active	MMRF1020-04GNR3	MMRF1020-04GNR3.pdf		3	260
OM780-4 PLASTIC	98ASA10833D	MPQ - 250 REELPOQ - 250 REEL	Active	MMRF1020-04NR3	MMRF1020-04NR3.pdf		3	260

MMRF1020-04NR3, MMRF1020-04GNR3 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors - Data Sheet MMRF1020-04N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Aerospace and Defense Solutions Brochure MMRF5300N

98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins MMRF1020-04N

MMRF1020-04GNR3.pdf MMRF1020-04N

98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N

MMRF1020-04NR3.pdf MMRF1020-04N

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