MMRF1020-04N: 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors

OM-780-4L, OM-780G-4L Package Image
特性
  • Production Tested in a Symmetrical Doherty Configuration
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MMRF1020-04NR3, MMRF1020-04GNR3 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors - Data Sheet (REV 0) PDF (512.0 kB) MMRF1020-04N10 Feb 2014
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D22 Mar 2016
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D22 Mar 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF1020-04GNR3Active7209604853200100 @ AVGW-CDMA19.5 @ 92048.50.45InputABLDMOS
MMRF1020-04NR3Active7209604853200100 @ AVGW-CDMA19.5 @ 92048.50.45InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM780-4 GULL PLASTIC98ASA10834DMPQ - 250 REELPOQ - 250 REELActiveMMRF1020-04GNR3MMRF1020-04GNR3.pdf3260
OM780-4 PLASTIC98ASA10833DMPQ - 250 REELPOQ - 250 REELActiveMMRF1020-04NR3MMRF1020-04NR3.pdf3260
MMRF1020-04NR3, MMRF1020-04GNR3 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors - Data Sheet MMRF1020-04N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
MMRF1020-04GNR3.pdf MMRF1020-04N
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
MMRF1020-04NR3.pdf MMRF1020-04N