MMRF2005N: 728-960 MHz, 3.2 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

特性
  • Characterized with series equivalent large-signal impedance parameters and common source S-parameters
  • On-chip matching (50 ohm input, DC blocked, >5 ohm output)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Integrated ESD protection
  • RoHS compliant
TO-270WB-16, TO-270WBG-16 Package Images
数据手册 (1)
名称/描述Modified Date
728-960 MHz, 3.2 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet (REV 0) PDF (689.7 kB) MMRF2005N [English]03 Aug 2015
应用说明 (5)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]16 May 2016
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10754D, TO-WB, 17.6x9.15x2.59, Pitch 14.0, 16 Pins (REV D) PDF (79.3 kB) 98ASA10754D [English]21 Mar 2016
98ASA10755D, 1887-01, TO-270 Wide Body, 16 Lead Gull Wing (REV A) PDF (50.6 kB) 98ASA10755D [English]31 Aug 2007
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MMRF2005NR1Active7289602844.9313.2 @ AVGW-CDMA35.9 @ 94016.51.6I/OABLDMOS
MMRF2005GNR1Active7289602844.9313.2 @ AVGW-CDMA35.9 @ 94016.51.6I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270 WB-16 GULL98ASA10755DMPQ - 500 REELPOQ - 500 REELActiveMMRF2005GNR1MMRF2005GNR1.pdf3260
TO-270 WB-16 PLASTIC98ASA10754DMPQ - 500 REELPOQ - 500 REELActiveMMRF2005NR1MMRF2005NR1.pdf3260
728-960 MHz, 3.2 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet MMRF2005N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASA10755D, 1887-01, TO-270 Wide Body, 16 Lead Gull Wing MMRF2005N
MMRF2005GNR1.pdf MMRF2005N
98ASA10754D, TO-WB, 17.6x9.15x2.59, Pitch 14.0, 16 Pins MMRF2005N
MMRF2005NR1.pdf MMRF2005N