MMRF2005N: 728-960 MHz, 3.2 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

TO-270WB-16, TO-270WBG-16 Package Images
特性
  • Characterized with series equivalent large-signal impedance parameters and common source S-parameters
  • On-chip matching (50 ohm input, DC blocked, >5 ohm output)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Integrated ESD protection
  • RoHS compliant
Data Sheets (1)
Name/DescriptionModified Date
728-960 MHz, 3.2 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet (REV 0) PDF (689.7 kB) MMRF2005N03 Aug 2015
Application Notes (5)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10754D, TO-WB, 17.6x9.15x2.59, Pitch 14.0, 16 Pins (REV D) PDF (79.3 kB) 98ASA10754D21 Mar 2016
98ASA10755D, 1887-01, TO-270 Wide Body, 16 Lead Gull Wing (REV A) PDF (50.6 kB) 98ASA10755D31 Aug 2007
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF2005GNR1Active7289602844.9313.2 @ AVGW-CDMA35.9 @ 94016.51.6I/OABLDMOS
MMRF2005NR1Not Recommended for New Design7289602844.9313.2 @ AVGW-CDMA35.9 @ 94016.51.6I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270 WB-16 GULL98ASA10755DMPQ - 500 REELPOQ - 500 REELActiveMMRF2005GNR1MMRF2005GNR1.pdf3260
TO-270 WB-16 PLASTIC98ASA10754DMPQ - 500 REELPOQ - 500 REELNot Recommended for New DesignMMRF2005NR1MMRF2005NR1.pdf3260
728-960 MHz, 3.2 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet MMRF2005N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASA10755D, 1887-01, TO-270 Wide Body, 16 Lead Gull Wing MMRF2005N
MMRF2005GNR1.pdf MMRF2005N
98ASA10754D, TO-WB, 17.6x9.15x2.59, Pitch 14.0, 16 Pins MMRF2005N
MMRF2005NR1.pdf MMRF2005N