MMRF2006N: 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier _ BDTIC 中国领先电子元器件代理商

MMRF2006N: 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier

特性

Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13-inch Reel.

PQFN 8x8 Package Image

数据手册 (1)

名称/描述	Modified Date
MMRF2006NT1 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier - Data Sheet (REV 0) PDF (712.7 kB) MMRF2006N [English]	24 Jul 2014

应用说明 (3)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]	12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]	09 Oct 2003

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]	16 May 2016

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (1)

名称/描述	Modified Date
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins (REV B) PDF (44.4 kB) 98ASA10760D [English]	21 Mar 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF2006NT1	Active		1805	2170	28	43	20	2.4 @ AVG	W-CDMA	32.6 @ 2140	17	1.9	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
PWR QFN 24 882.1P0.8	98ASA10760D	MPQ - 1000 REELPOQ - 1000 REEL	Active	MMRF2006NT1	MMRF2006NT1.pdf		3	260

MMRF2006NT1 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier - Data Sheet MMRF2006N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Aerospace and Defense Solutions Brochure MMRF5300N

RF Products Selector Guide MMT20303H

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins MMRF2006N

MMRF2006NT1.pdf MMRF2006N

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