MMRF2006N: 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier
PQFN 8x8 Package Image
特性
- Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
- On-Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
- Integrated ESD Protection
- RoHS Compliant
- In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MMRF2006NT1 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier - Data Sheet (REV 0) PDF (712.7 kB) MMRF2006N | 24 Jul 2014 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 | 12 May 2004 |
| Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 | 09 Oct 2003 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins (REV B) PDF (44.4 kB) 98ASA10760D | 21 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF2006NT1 | Active | 1805 | 2170 | 28 | 43 | 20 | 2.4 @ AVG | W-CDMA | 32.6 @ 2140 | 17 | 1.9 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| PWR QFN 24 8*8*2.1P0.8 | 98ASA10760D | MPQ - 1000 REELPOQ - 1000 REEL | Active | MMRF2006NT1 | MMRF2006NT1.pdf |  | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
- Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- RF Products Selector Guide MMT20303H
- 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins MMRF2006N
- MMRF2006NT1.pdf MMRF2006N
