MMRF5014H: 1-2700 MHz, 125 W CW, 50 V Wideband RF Power GaN on SiC Transistor
The MMRF5014H 125 W CW RF power GaN transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.
This part is characterized and performance is guaranteed for applications operating in the 1-2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
特性
| RF NI-360H-2SB Package image |
数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| MMRF5014H 125 W CW, 50 V GaN on SiC Data Sheet (REV 1) PDF (702.8 kB) MMRF5014H [English] | 30 Sep 2015 |
应用说明 (1)
| 名称/描述 | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English] | 29 Apr 2014 |
工程设计要点 (1)
| 名称/描述 | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English] | 19 Jan 2004 |
手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English] | 16 May 2016 |
选型工具指南 (1)
| 名称/描述 | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English] | 26 May 2016 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins (REV O) PDF (42.3 kB) 98ASA00795D [English] | 05 Nov 2014 |
支持信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| MMRF5014H: 125 W CW GaN-on-SiC Transistor (REV 0) PDF (450.0 kB) MMRF5014H_50V_GAN_TRN_SI [English] | 23 Nov 2014 |
订购信息
| 型号 | 状态 | 状态 | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | 供电电压 (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | 输出功率 (Typ) (W) @ Intermodulation Level at Test Signal | 测试信号 | 功率增益 (Typ) (dB) @ f (MHz) | 效率 (Typ) (%) | 热阻 (Spec)(°C/W) | 匹配 | 类型 | 模具技术 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF5014HR5 | Active | 1 | 2700 | 50 | 51 | 125 | 125 @ CW | CW | 16 @ 2500 | 64.2 | 0.86 | Input | AB | GaN |
封装环保信息
| 封装说明 | Outline Version | 包装 | 产品状态 | 部件编号 | 化学成分 | RoHS / Pb Free中国RoHS查询 | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI360H-2SB | 98ASA00795D | MPQ - 50 REELPOQ - 50 BOX | Active | MMRF5014HR5 | MMRF5014HR5.pdf |   | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- RF Products Selector Guide MMT20303H
- MMRF5014H: 125 W CW GaN-on-SiC Transistor MMRF5014H
- 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins MMRF5014H
- MMRF5014HR5.pdf MMRF5014H
