MMRF5014H: 1-2700 MHz, 125 W CW, 50 V Wideband RF Power GaN on SiC Transistor
The MMRF5014H 125 W CW RF power GaN transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.
This part is characterized and performance is guaranteed for applications operating in the 1-2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
RF NI-360H-2SB Package image
特性
- Decade bandwidth performance
- Low thermal resistance
- Advanced GaN on SiC, offering high power density
- Input matched for extended wideband performance
- High ruggedness: > 20:1 VSWR
- RoHS Compliant
Data Sheets (1)
Application Notes (1)
Engineering Bulletins (1)
Brochures (1)
Selector Guides (1)
Package Information (1)
Supporting Information (1)
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|
| MMRF5014HR5 | Active | | 1 | 2700 | 50 | 51 | 125 | 125 @ CW | CW | 16 @ 2500 | 64.2 | 0.86 | Input | AB | GaN |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|
| NI360H-2SB | 98ASA00795D | MPQ - 50 REELPOQ - 50 BOX | Active | MMRF5014HR5 | MMRF5014HR5.pdf |   | 260 |
