MMRF5015N: 1-2700 MHz, 125 W CW, 50 V Wideband RF Power GaN on SiC Transistor
The MMRF5015N 125 W CW RF power GaN transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.
This part is characterized and performance is guaranteed for applications operating in the 1-2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
特性- Decade bandwidth performance
- Plastic package enables improved thermal resistance
- Advanced GaN on SiC, offering high power density
- Input matched for extended wideband performance
- High ruggedness: > 20:1 VSWR
- RoHS Compliant
特性- Ideal for military end-use applications, including the following:
- Narrowband and multi-octave wideband amplifiers
- Radar
- Jammers
- EMC testing
- Narrowband and multi-octave wideband amplifiers
- Radar
- Jammers
- EMC testing
- Also suitable for commercial applications, including the following:
- Public mobile radios, including emergency service radios
- Industrial, scientific and medical
- Wideband laboratory amplifiers
- Wireless cellular infrastructure
- Public mobile radios, including emergency service radios
- Industrial, scientific and medical
- Wideband laboratory amplifiers
- Wireless cellular infrastructure
| OM-270-2 Package Image |
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订购信息
| 型号 | 状态 | 状态 | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | 供电电压 (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | 输出功率 (Typ) (W) @ Intermodulation Level at Test Signal | 测试信号 | 功率增益 (Typ) (dB) @ f (MHz) | 效率 (Typ) (%) | 热阻 (Spec)(°C/W) | 匹配 | 类型 | 模具技术 |
|---|
| MMRF5015NR5 | Active | | 1 | 2700 | 50 | 51 | 125 | 125 @ CW | CW | 16 @ 2500 | 64.2 | 0.66 | Input | AB | GaN |
封装环保信息
