MMRF5015N: 1-2700 MHz, 125 W CW, 50 V Wideband RF Power GaN on SiC Transistor

The MMRF5015N 125 W CW RF power GaN transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.

This part is characterized and performance is guaranteed for applications operating in the 1-2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

OM-270-2 Package Image
特性
  • Decade bandwidth performance
  • Plastic package enables improved thermal resistance
  • Advanced GaN on SiC, offering high power density
  • Input matched for extended wideband performance
  • High ruggedness: > 20:1 VSWR
  • RoHS Compliant
特性
  • Ideal for military end-use applications, including the following:
    • Narrowband and multi-octave wideband amplifiers
    • Radar
    • Jammers
    • EMC testing
  • Narrowband and multi-octave wideband amplifiers
  • Radar
  • Jammers
  • EMC testing
  • Also suitable for commercial applications, including the following:
    • Public mobile radios, including emergency service radios
    • Industrial, scientific and medical
    • Wideband laboratory amplifiers
    • Wireless cellular infrastructure
  • Public mobile radios, including emergency service radios
  • Industrial, scientific and medical
  • Wideband laboratory amplifiers
  • Wireless cellular infrastructure
Data Sheets (1)
Name/DescriptionModified Date
MMRF5015N 125 W CW, 50 V GaN on SiC Data Sheet (REV 0) PDF (533.3 kB) MMRF5015N28 Sep 2015
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00814D, OMNI, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV O) PDF (88.3 kB) 98ASA00814D04 Dec 2014
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF5015NR5Active127005051125125 @ CWCW16 @ 250064.20.66InputABGaN
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM-270-298ASA00814DMPQ - 50 REELPOQ - 50 REELActiveMMRF5015NR5MMRF5015NR5.pdf3260
MMRF5015N 125 W CW, 50 V GaN on SiC Data Sheet MMRF5015N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
MMRF5015N 200-2500 MHz PCB DXF file MMRF5015N
MMRF5015N 2500 MHz Narrowband PCB DXF file MMRF5015N
98ASA00814D, OMNI, 9.65x6.1x2.03, Pitch 6.06, 3 Pins MMRF5300N
MMRF5015NR5.pdf MMRF5015N