MRF6V12250H: 960-1215 MHz,275 W,50 V脉冲射频功率LDMOS

特性
  • 典型脉冲性能:VDD = 50 V,IDQ = 100 mA,输出功率 = 275 W峰值(27.5 W平均值), f = 1030 MHz,脉冲宽度 = 128 µsec,占空比 = 10% 功率增益:20.3 dB漏极效率:65.5%
  • 在50 Vdc,1030 MHz,275 W峰值功率时,能承受10:1 VSWR
  • 典型宽带性能:VDD = 50 V,IDQ = 100 mA,输出功率 = 250 W峰值(25 W平均值),f = 960–1215 MHz,脉冲宽度 = 128 µsec,占空比 = 10% 功率增益:19.8 dB漏极效率:58%
  • 提供串联等效大信号阻抗参数
  • 内部匹配,简便易用
  • 工作电压最高可达50 VDD
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,56 mm卷带宽度,13英寸卷盘
  • 这些产品包含在恩智浦产品长期供货计划中,自推出后至少保证10年供货。
NI-780, NI-780S Package Image
数据手册 (1)
名称/描述Modified Date
MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs (REV 2) PDF (1.3 MB) MRF6V12250H [English]28 Apr 2010
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English]04 Sep 2015
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]08 Sep 2011
封装信息 (2)
名称/描述Modified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C [English]22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]22 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF6V12250HR5Active96012155054.4275275 @ PeakPulse20.3 @ 103065.50.08I/OABLDMOS
MRF6V12250HSR5Active96012155054.4275275 @ PeakPulse20.3 @ 103065.50.08I/OABLDMOS
MRF6V12250HSR3No Longer Manufactured96012155054.4275275 @ PeakPulse20.3 @ 103065.50.08I/OABLDMOS
MRF6V12250HR3No Longer Manufactured96012155054.4275275 @ PeakPulse20.3 @ 103065.50.08I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-78098ASB15607CMPQ - 50 REELPOQ - 50 REELActiveMRF6V12250HR5MRF6V12250HR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6V12250HR3MRF6V12250HR3.pdf260
NI-780S98ASB16718CMPQ - 50 REELPOQ - 50 REELActiveMRF6V12250HSR5MRF6V12250HSR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6V12250HSR3MRF6V12250HSR3.pdf260
MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs mrf6v12250h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Solutions for Commercial Aerospace mrfe6vs25n
RF Products Selector Guide MMT20303H
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
MRF6V12250HR5.pdf MRF6V12250H
MRF6V12250HR3.pdf MRF6V12250H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
MRF6V12250HSR5.pdf MRF6V12250H
MRF6V12250HSR3.pdf MRF6V12250H