MRF8S21100H: 2110-2170 MHz，24 W平均值，28 V单载波W-CDMA，LTE横向N信道射频功率MOSFET _ BDTIC 中国领先电子元器件代理商

MRF8S21100H: 2110-2170 MHz，24 W平均值，28 V单载波W-CDMA，LTE横向N信道射频功率MOSFET

特性

典型单载波W-CDMA性能：VDD = 28 V，IDQ = 700 mA，平均输出功率 = 24 W，IQ幅度削峰，信道带宽 = 3.84 MHz，输入信号PAR = 7.5 dB @ 0.01% CCDF。频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 2110 MHz17.933.06.4–38.7 2140 MHz18.133.06.4–38.2 2170 MHz18.333.46.3–37.2
在32 Vdc，2140 MHz，183 W连续波输出功率(3 dB过驱额定输出功率)时，能承受10:1 VSWR
1 dB压缩点时，典型连续波输出功率 ≃ 100 W
100%经过PAR测试，可保证输出功率能力
提供串联等效大信号阻抗参数和共源S参数
内部匹配，简便易用
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
专为数字预失真纠错系统而设计
为Doherty应用进行了优化
符合RoHS规范
采用盘卷包装。R3后缀 = 250个，56 mm卷带宽度，13英寸卷盘。

NI-780, NI-780S Package Image

数据手册 (1)

名称/描述	Modified Date
MRF8S21100HR3, MRF8S21100HSR3 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs (REV 1) PDF (452.9 kB) MRF8S21100H [English]	31 Mar 2011

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C [English]	22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]	22 Mar 2016

订购信息

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF8S21100HSR3	Active	2110	2170	28	50	100	24 @ AVG	W-CDMA	18.3 @ 2170	33.4	0.48	I/O	AB	LDMOS
MRF8S21100HR3	No Longer Manufactured	2110	2170	28	50	100	24 @ AVG	W-CDMA	18.3 @ 2170	33.4	0.48	I/O	AB	LDMOS
MRF8S21100HSR5	No Longer Manufactured	2110	2170	28	50	100	24 @ AVG	W-CDMA	18.3 @ 2170	33.4	0.48	I/O	AB	LDMOS
MRF8S21100HR5	No Longer Manufactured	2110	2170	28	50	100	24 @ AVG	W-CDMA	18.3 @ 2170	33.4	0.48	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-780S	98ASB16718C	MPQ - 250 REELPOQ - 250 REEL	Active	MRF8S21100HSR3	MRF8S21100HSR3.pdf		260
NI-780S	98ASB16718C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8S21100HSR5	MRF8S21100HSR5.pdf		260
NI-780	98ASB15607C	MPQ - 250 REELPOQ - 250 REEL	No Longer Manufactured	MRF8S21100HR3	MRF8S21100HR3.pdf		260
NI-780	98ASB15607C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8S21100HR5	MRF8S21100HR5.pdf		260

MRF8S21100HR3, MRF8S21100HSR3 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs MRF8S21100H

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H

MRF8S21100HSR3.pdf MRF8S21100H

MRF8S21100HSR5.pdf MRF8S21100H

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H

MRF8S21100HR3.pdf MRF8S21100H

MRF8S21100HR5.pdf MRF8S21100H

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