MRF8S21100H: 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors

NI-780, NI-780S Package Image
特性
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF8S21100HR3, MRF8S21100HSR3 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs (REV 1) PDF (452.9 kB) MRF8S21100H31 Mar 2011
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C22 Mar 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8S21100HSR3Active21102170285010024 @ AVGW-CDMA18.3 @ 217033.40.48I/OABLDMOS
MRF8S21100HR3No Longer Manufactured21102170285010024 @ AVGW-CDMA18.3 @ 217033.40.48I/OABLDMOS
MRF8S21100HSR5No Longer Manufactured21102170285010024 @ AVGW-CDMA18.3 @ 217033.40.48I/OABLDMOS
MRF8S21100HR5No Longer Manufactured21102170285010024 @ AVGW-CDMA18.3 @ 217033.40.48I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780S98ASB16718CMPQ - 250 REELPOQ - 250 REELActiveMRF8S21100HSR3MRF8S21100HSR3.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S21100HSR5MRF8S21100HSR5.pdf260
NI-78098ASB15607CMPQ - 250 REELPOQ - 250 REELNo Longer ManufacturedMRF8S21100HR3MRF8S21100HR3.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S21100HR5MRF8S21100HR5.pdf260
MRF8S21100HR3, MRF8S21100HSR3 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs MRF8S21100H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
MRF8S21100HSR3.pdf MRF8S21100H
MRF8S21100HSR5.pdf MRF8S21100H
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
MRF8S21100HR3.pdf MRF8S21100H
MRF8S21100HR5.pdf MRF8S21100H