MRF8S21200H: 2110-2170 MHz,48 W平均值,28 V W-CDMA,LTE射频功率LDMOS

特性
  • 典型单载波W-CDMA性能:VDD = 28 V,IDQ = 1400 mA,平均输出功率 = 48 W,IQ幅度削峰,信道带宽 = 3.84 MHz,输入信号PAR = 7.5 dB @ 0.01% CCDF。 频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 2110 MHz17.832.66.4–37.7 2140 MHz18.132.66.3–37.1 2170 MHz18.132.96.2–36.2
  • 在32 Vdc,2140 MHz,250 W连续波输出功率(自额定输出功率3 dB输入过驱)时,能承受10:1 VSWR
  • 100%经过PAR测试,可保证输出功率容量
  • 提供串联等效大信号阻抗参数和共源S参数
  • 内部匹配,简便易用
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用盘卷包装。R6后缀 = 150个,56 mm卷带宽度,13英寸卷盘。
NI-1230H-4S, NI-1230S-4S Product Images
数据手册 (1)
名称/描述Modified Date
MRF8S21200HR6, MRF8S21200HSR6 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs (REV 2) PDF (594.5 kB) MRF8S21200H [English]07 Oct 2010
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C [English]23 Feb 2016
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF8S21200HSR6Active211021702852.517848 @ AVGW-CDMA18.1 @ 214032.60.31I/OABLDMOS
MRF8S21200HR6No Longer Manufactured211021702852.517848 @ AVGW-CDMA18.1 @ 214032.60.31I/OABLDMOS
MRF8S21200HSR5No Longer Manufactured211021702852.517848 @ AVGW-CDMA18.1 @ 214032.60.31I/OABLDMOS
MRF8S21200HR5No Longer Manufactured211021702852.517848 @ AVGW-CDMA18.1 @ 214032.60.31I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-1230S98ARB18247CMPQ - 150 REELPOQ - 150 REELActiveMRF8S21200HSR6MRF8S21200HSR6.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S21200HSR5MRF8S21200HSR5.pdf260
NI-123098ASB16977CMPQ - 150 REELPOQ - 150 REELNo Longer ManufacturedMRF8S21200HR6MRF8S21200HR6.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S21200HR5MRF8S21200HR5.pdf260
MRF8S21200HR6, MRF8S21200HSR6 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs mrf8s21200h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF8S21200HSR6.pdf MRF8S21200H
MRF8S21200HSR5.pdf MRF8S21200H
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF8S21200HR6.pdf MRF8S21200H
MRF8S21200HR5.pdf MRF8S21200H