MRF8S21200H: 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
NI-1230H-4S, NI-1230S-4S Product Images
特性
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
- In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF8S21200HR6, MRF8S21200HSR6 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs (REV 2) PDF (594.5 kB) MRF8S21200H | 07 Oct 2010 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C | 05 Apr 2016 |
| 98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C | 23 Feb 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8S21200HSR6 | Not Recommended for New Design | 2110 | 2170 | 28 | 52.5 | 178 | 48 @ AVG | W-CDMA | 18.1 @ 2140 | 32.6 | 0.31 | I/O | AB | LDMOS |
| MRF8S21200HR6 | No Longer Manufactured | 2110 | 2170 | 28 | 52.5 | 178 | 48 @ AVG | W-CDMA | 18.1 @ 2140 | 32.6 | 0.31 | I/O | AB | LDMOS |
| MRF8S21200HSR5 | No Longer Manufactured | 2110 | 2170 | 28 | 52.5 | 178 | 48 @ AVG | W-CDMA | 18.1 @ 2140 | 32.6 | 0.31 | I/O | AB | LDMOS |
| MRF8S21200HR5 | No Longer Manufactured | 2110 | 2170 | 28 | 52.5 | 178 | 48 @ AVG | W-CDMA | 18.1 @ 2140 | 32.6 | 0.31 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-1230S | 98ARB18247C | MPQ - 150 REELPOQ - 150 REEL | Not Recommended for New Design | MRF8S21200HSR6 | MRF8S21200HSR6.pdf |   | 260 |
| Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part | MRF8S21200HSR5 | MRF8S21200HSR5.pdf | | 260 | |||
| NI-1230 | 98ASB16977C | MPQ - 150 REELPOQ - 150 REEL | No Longer Manufactured | MRF8S21200HR6 | MRF8S21200HR6.pdf | | 260 |
| Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part | MRF8S21200HR5 | MRF8S21200HR5.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
- MRF8S21200HSR6.pdf MRF8S21200H
- MRF8S21200HSR5.pdf MRF8S21200H
- 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
- MRF8S21200HR6.pdf MRF8S21200H
- MRF8S21200HR5.pdf MRF8S21200H
