MRF8S9260H: 920-960 MHz，75 W平均值，28 V单载波W-CDMA射频功率LDMOS _ BDTIC 中国领先电子元器件代理商

MRF8S9260H: 920-960 MHz，75 W平均值，28 V单载波W-CDMA射频功率LDMOS

特性

典型单载波W-CDMA性能：VDD = 28 V，IDQ = 1700 mA，平均输出功率 = 75 W，IQ幅度削峰，信道带宽 = 3.84 MHz，输入信号PAR = 7.5 dB @ 0.01% CCDF。频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 920 MHz18.836.06.3–39.5 940 MHz18.737.06.2–38.6 960 MHz18.638.55.9–37.1
在32 Vdc，940 MHz，380 W连续波输出功率(自额定输出功率3 dB输入过驱)时，能承受7:1 VSWR，旨在增强耐用性
1 dB压缩点时，典型连续波输出功率 ≃ 260 W
100%经过PAR测试，可保证输出功率容量
提供串联等效大信号阻抗参数和共源S参数
内部匹配，简便易用
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
为Doherty应用进行了优化
符合RoHS规范
采用盘卷包装。R3后缀 = 250个，56 mm卷带宽度，13英寸卷盘。

NI-880, NI-880S Package Image

数据手册 (1)

名称/描述	Modified Date
MRF8S9260HR3, MRF8S9260HSR3 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 1) PDF (401.7 kB) MRF8S9260H [English]	23 Feb 2012

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins (REV F) PDF (41.4 kB) 98ARB18660C [English]	01 Mar 2016
98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins (REV G) PDF (47.3 kB) 98ARB18493C [English]	04 Feb 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF8S9260HSR3	Active		920	960	28	54.1	260	75 @ AVG	W-CDMA	18.6 @ 960	38.5	0.37	I/O	AB	LDMOS
MRF8S9260HR3	No Longer Manufactured		920	960	28	54.1	260	75 @ AVG	W-CDMA	18.6 @ 960	38.5	0.37	I/O	AB	LDMOS
MRF8S9260HR5	No Longer Manufactured		920	960	28	54.1	260	75 @ AVG	W-CDMA	18.6 @ 960	38.5	0.37	I/O	AB	LDMOS
MRF8S9260HSR5	No Longer Manufactured		920	960	28	54.1	260	75 @ AVG	W-CDMA	18.6 @ 960	38.5	0.37	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-880S	98ARB18660C	MPQ - 250 REELPOQ - 250 REEL	Active	MRF8S9260HSR3	MRF8S9260HSR3.pdf
NI-880S	98ARB18660C		No Longer Manufactured	MRF8S9260HSR5	MRF8S9260HSR5.pdf
NI-880	98ARB18493C	MPQ - 250 REELPOQ - 250 REEL	No Longer Manufactured	MRF8S9260HR3	MRF8S9260HR3.pdf
NI-880	98ARB18493C	MPQ - 50 REELPOQ - 50 REEL	Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8S9260HR5	MRF8S9260HR5.pdf

MRF8S9260HR3, MRF8S9260HSR3 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs mrf8s9260h

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins mrf6s24140h

MRF8S9260HSR3.pdf MRF8S9260H

MRF8S9260HSR5.pdf MRF8S9260H

98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins mrf6s24140h

MRF8S9260HR3.pdf MRF8S9260H

MRF8S9260HR5.pdf MRF8S9260H

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