MRF8S9260H: 920-960 MHz,75 W平均值,28 V单载波W-CDMA射频功率LDMOS

特性
  • 典型单载波W-CDMA性能:VDD = 28 V,IDQ = 1700 mA,平均输出功率 = 75 W,IQ幅度削峰,信道带宽 = 3.84 MHz,输入信号PAR = 7.5 dB @ 0.01% CCDF。 频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 920 MHz18.836.06.3–39.5 940 MHz18.737.06.2–38.6 960 MHz18.638.55.9–37.1
  • 在32 Vdc,940 MHz,380 W连续波输出功率(自额定输出功率3 dB输入过驱)时,能承受7:1 VSWR,旨在增强耐用性
  • 1 dB压缩点时,典型连续波输出功率 ≃ 260 W
  • 100%经过PAR测试,可保证输出功率容量
  • 提供串联等效大信号阻抗参数和共源S参数
  • 内部匹配,简便易用
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 为Doherty应用进行了优化
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,56 mm卷带宽度,13英寸卷盘。
NI-880, NI-880S Package Image
数据手册 (1)
名称/描述Modified Date
MRF8S9260HR3, MRF8S9260HSR3 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 1) PDF (401.7 kB) MRF8S9260H [English]23 Feb 2012
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins (REV F) PDF (41.4 kB) 98ARB18660C [English]01 Mar 2016
98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins (REV G) PDF (47.3 kB) 98ARB18493C [English]04 Feb 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF8S9260HSR3Active9209602854.126075 @ AVGW-CDMA18.6 @ 96038.50.37I/OABLDMOS
MRF8S9260HR3No Longer Manufactured9209602854.126075 @ AVGW-CDMA18.6 @ 96038.50.37I/OABLDMOS
MRF8S9260HR5No Longer Manufactured9209602854.126075 @ AVGW-CDMA18.6 @ 96038.50.37I/OABLDMOS
MRF8S9260HSR5No Longer Manufactured9209602854.126075 @ AVGW-CDMA18.6 @ 96038.50.37I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-880S98ARB18660CMPQ - 250 REELPOQ - 250 REELActiveMRF8S9260HSR3MRF8S9260HSR3.pdf
No Longer ManufacturedMRF8S9260HSR5MRF8S9260HSR5.pdf
NI-88098ARB18493CMPQ - 250 REELPOQ - 250 REELNo Longer ManufacturedMRF8S9260HR3MRF8S9260HR3.pdf
MPQ - 50 REELPOQ - 50 REELMigration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S9260HR5MRF8S9260HR5.pdf
MRF8S9260HR3, MRF8S9260HSR3 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs mrf8s9260h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins mrf6s24140h
MRF8S9260HSR3.pdf MRF8S9260H
MRF8S9260HSR5.pdf MRF8S9260H
98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins mrf6s24140h
MRF8S9260HR3.pdf MRF8S9260H
MRF8S9260HR5.pdf MRF8S9260H