MRF8S9260H: 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
NI-880, NI-880S Package Image
特性
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source S-Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Optimized for Doherty Applications
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF8S9260HR3, MRF8S9260HSR3 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 1) PDF (401.7 kB) MRF8S9260H | 23 Feb 2012 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins (REV F) PDF (41.4 kB) 98ARB18660C | 01 Mar 2016 |
| 98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins (REV G) PDF (47.3 kB) 98ARB18493C | 04 Feb 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8S9260HSR3 | Not Recommended for New Design | 920 | 960 | 28 | 54.1 | 260 | 75 @ AVG | W-CDMA | 18.6 @ 960 | 38.5 | 0.37 | I/O | AB | LDMOS | |
| MRF8S9260HR3 | No Longer Manufactured | 920 | 960 | 28 | 54.1 | 260 | 75 @ AVG | W-CDMA | 18.6 @ 960 | 38.5 | 0.37 | I/O | AB | LDMOS | |
| MRF8S9260HR5 | No Longer Manufactured | 920 | 960 | 28 | 54.1 | 260 | 75 @ AVG | W-CDMA | 18.6 @ 960 | 38.5 | 0.37 | I/O | AB | LDMOS | |
| MRF8S9260HSR5 | No Longer Manufactured | 920 | 960 | 28 | 54.1 | 260 | 75 @ AVG | W-CDMA | 18.6 @ 960 | 38.5 | 0.37 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-880S | 98ARB18660C | MPQ - 250 REELPOQ - 250 REEL | Not Recommended for New Design | MRF8S9260HSR3 | MRF8S9260HSR3.pdf |   | |
| No Longer Manufactured | MRF8S9260HSR5 | MRF8S9260HSR5.pdf | | ||||
| NI-880 | 98ARB18493C | MPQ - 250 REELPOQ - 250 REEL | No Longer Manufactured | MRF8S9260HR3 | MRF8S9260HR3.pdf | | |
| MPQ - 50 REELPOQ - 50 REEL | Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part | MRF8S9260HR5 | MRF8S9260HR5.pdf | |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins mrf6s24140h
- MRF8S9260HSR3.pdf MRF8S9260H
- MRF8S9260HSR5.pdf MRF8S9260H
- 98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins mrf6s24140h
- MRF8S9260HR3.pdf MRF8S9260H
- MRF8S9260HR5.pdf MRF8S9260H
