PBSS5112PAP: 120 V,1 A PNP/PNP低VCEsat (BISS)晶体管

PNP/PNP低VCEsat突破性小信号(BISS)晶体管,采用无引脚中等功率DFN2020-6 (SOT1118)表面贴装器件(SMD)塑料封装。NPN/PNP补充产品:PBSS4112PANP。NPN/NPN补充产品:PBSS4112PAN。

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数据手册 (1)
名称/描述Modified Date
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor (REV 1.0) PDF (248.0 kB) PBSS5112PAP [English]30 Nov 2012
封装信息 (1)
名称/描述Modified Date
DFN2020-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm (REV 1.0) PDF (198.0 kB) SOT1118 [English]08 Feb 2016
可靠性与质量信息 (2)
名称/描述Modified Date
PBSS5112PAP NXP® Product Reliability (REV 1.1) PDF (82.0 kB) PBSS5112PAP_1 [English]31 Jan 2015
PBSS5112PAP NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS5112PAP_NXP_PRODUCT_QUALITY [English]31 Jan 2015
支持信息 (1)
名称/描述Modified Date
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]30 Sep 2013
SPICE
订购信息
型号状态Package versionPackage name大小 (mm)transistor polarityTransistor polarityPolaritynumber of transistorsPtot [max] (mW)ICM [max] (A)VCEO [max] (V)IC [max] (A)hFE [typ]VCEsat [max] (NPN) (mV)VCEsat [max] (PNP) (mV)fT [min] (MHz)RCEsat [typ] (mΩ)RCEsat@IC [max]; IC/IB =10 [typ] (mΩ)VCEsat [max] (mV)hFE [min]fT [typ] (MHz)RCEsat [max] (mΩ)
PBSS5112PAPActiveSOT1118DFN2020-62 x 2 x 0.65PNPPNP2370-1.5-120-1305-48050440-220190100440
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor PBSS5112PAP
DFN2020-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm PBSS5260PAP
PBSS5112PAP NXP® Product Reliability PBSS5112PAP
PBSS5112PAP NXP Product Quality PBSS5112PAP
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
PBSS5112PAP SPICE model PBSS5112PAP
PMFPB8040XP