PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.
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120 V, 1 A PNP/PNP low VCEsat (BISS) transistor (REV 1.0) PDF (248.0 kB) PBSS5112PAP | 30 Nov 2012 |
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DFN2020-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm (REV 1.0) PDF (198.0 kB) SOT1118 | 08 Feb 2016 |
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DFN2020-6; reel pack; standard orientation; 12NC ending 115 (REV 1.0) PDF (196.0 kB) SOT1118_115 | 07 Nov 2012 |
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PBSS5112PAP NXP® Product Reliability (REV 1.1) PDF (82.0 kB) PBSS5112PAP_1 | 31 Jan 2015 |
PBSS5112PAP NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS5112PAP_NXP_PRODUCT_QUALITY | 31 Jan 2015 |
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Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE | 30 Sep 2013 |
Product | Status | Package version | Package name | Size (mm) | transistor polarity | Transistor polarity | Polarity | number of transistors | Ptot [max] (mW) | ICM [max] (A) | VCEO [max] (V) | IC [max] (A) | hFE [typ] | VCEsat [max] (NPN) (mV) | VCEsat [max] (PNP) (mV) | fT [min] (MHz) | RCEsat [typ] (mΩ) | RCEsat@IC [max]; IC/IB =10 [typ] (mΩ) | VCEsat [max] (mV) | hFE [min] | fT [typ] (MHz) | RCEsat [max] (mΩ) |
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PBSS5112PAP | Active | SOT1118 | DFN2020-6 | 2 x 2 x 0.65 | PNP | PNP | 2 | 370 | -1.5 | -120 | -1 | 305 | -480 | 50 | 440 | -220 | 190 | 100 | 440 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | EFR | IFR(FIT) | MTBF(hour) | MSL | MSL LF |
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PBSS5112PAP | ![]() | SOT1118 | Reflow_Soldering_Profile | Reel 7" Q1/T1 | Active | PBSS5112PAP,115 (9340 668 94115) | 2S | PBSS5112PAP | ![]() ![]() ![]() | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |