A2G26H281-04S: 2496-2690 MHz,50 W 平均值,48 V Airfast®射频功率GaN晶体管

A2G26H281-04S 50 W非对称Doherty GaN射频功率晶体管专为2496到2690 MHz频率且需要宽瞬时带宽的移动通信基站应用而设计。该部件的特征参数和性能适用于运行在2496–2690 MHz频段的应用。如果将该部件用于工作频率超出该范围的应用,则无法保证其性能。

特性
  • 高终端阻抗,支持最佳宽带性能
  • 先进的高性能内部封装Doherty
  • 可承受极高的输出VSWR和宽带运行条件
  • 符合RoHS规范
NI-780S-4L Package Image
数据手册 (1)
名称/描述Modified Date
A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet (REV 0) PDF (244.9 kB) A2G26H281-04S [English]08 Sep 2016
应用说明 (2)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN1908 [English]24 Feb 2011
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D [English]15 Aug 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
PA2G26H281-04SIntroduction Pending249626904850 @ AVGW-CDMA14.3 @ 263560.9InputAB, CGaN
A2G26H281-04SR3Active249626904850 @ AVGW-CDMA14.3 @ 263560.91InputAB, CGaN
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780S-4L98ASA10718DMPQ - 250 REELPOQ - 250 BOXActiveA2G26H281-04SR3A2G26H281-04SR3.pdf260
A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet A2G26H281-04S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H
RF Products Selector Guide MMT20303H
A2G26H281-04S 2600 MHz PCB DXF file A2G26H281-04S
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
A2G26H281-04SR3.pdf A2G26H281-04S