A2G26H281-04S: 2496-2690 MHz, 50 W Avg., 48 V Airfast® RF Power GaN Transistor
The A2G26H281-04S 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-780S-4L Package Image
特性
- High terminal impedances for optimal broadband performance
- Advanced high performance in-package Doherty
- Able to withstand extremely high output VSWR and broadband operating conditions
- RoHS compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet (REV 0) PDF (244.9 kB) A2G26H281-04S | 08 Sep 2016 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN1908 | 24 Feb 2011 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D | 15 Aug 2016 |
Printed Circuit Boards
- A2G26H281-04S 2600 MHz PCB DXF file (REV 0) ZIP A2G26H281-04S_2600_PCB 9/8/2016
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PA2G26H281-04S | Introduction Pending | 2496 | 2690 | 48 | 50 @ AVG | W-CDMA | 14.3 @ 2635 | 60.9 | Input | AB, C | GaN | |||
| A2G26H281-04SR3 | Active | 2496 | 2690 | 48 | 50 @ AVG | W-CDMA | 14.3 @ 2635 | 60.9 | 1 | Input | AB, C | GaN |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780S-4L | 98ASA10718D | MPQ - 250 REELPOQ - 250 BOX | Active | A2G26H281-04SR3 | A2G26H281-04SR3.pdf |   | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H
- RF Products Selector Guide MMT20303H
- A2G26H281-04S 2600 MHz PCB DXF file A2G26H281-04S
- 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
- A2G26H281-04SR3.pdf A2G26H281-04S
