A2I20H060N: 1800-2200 MHz,12 W平均值,28 V Airfast宽带集成射频LDMOS放大器

特性
  • 先进的高性能内部封装Doherty
  • 片上匹配(50 Ohm隔直输入)
  • 集成静态电流温度补偿,具有启用/禁用功能
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
TO-270WB-15 and TO-270WBG-15 Package Image
数据手册 (1)
名称/描述Modified Date
A2I20H060N 1800-2200 MHz, 12 W Avg, 28 V Data Sheet (REV 0) PDF (984.8 kB) A2I20H060N [English]15 Feb 2016
应用说明 (4)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins (REV A) PDF (84.9 kB) 98ASA00684D [English]11 Mar 2016
98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins (REV A) PDF (80.2 kB) 98ASA00630D [English]15 Feb 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
A2I20H060GNR1Active1800220028486312 @ AVGW-CDMA28.4 @ 184043.81.6InputABLDMOS
A2I20H060NR1Active1800220028486312 @ AVGW-CDMA28.4 @ 184043.81.6InputABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270WB-15G98ASA00684DMPQ - 500 REELPOQ - 500 REELActiveA2I20H060GNR1A2I20H060GNR1.pdf3260
TO-270WB-1598ASA00630DMPQ - 500 REELPOQ - 500 REELActiveA2I20H060NR1A2I20H060NR1.pdf3260
A2I20H060N 1800-2200 MHz, 12 W Avg, 28 V Data Sheet A2I20H060N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
A2I20H060N 1800 MHz PCB DXF file A2I20H060N
A2I20H060N 2100 MHz PCB DXF file A2I20H060N
98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins A2I25D012N
A2I20H060GNR1.pdf A2I20H060N
98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins A2I25D012N
A2I20H060NR1.pdf A2I20H060N